BD244CG, Биполярный транзистор, PNP, 100 В, 6 А, 65Вт
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Описание
Транзисторы / Биполярные транзисторы / Одиночные биполярные транзисторы
Биполярный транзистор, PNP, 100 В, 6 А, 65Вт
Технические параметры
Корпус | TO-220AB | |
Brand | ON Semiconductor | |
Collector- Base Voltage VCBO | 100 V | |
Collector- Emitter Voltage VCEO Max | 100 V | |
Collector-Emitter Saturation Voltage | 1.5 V | |
Configuration | Single | |
Continuous Collector Current | 6 A | |
DC Collector/Base Gain hfe Min | 30 | |
Emitter- Base Voltage VEBO | 5 V | |
Factory Pack Quantity | 50 | |
Gain Bandwidth Product fT | 3 MHz | |
Height | 9.28 mm(Max) | |
Length | 10.28 mm(Max) | |
Manufacturer | ON Semiconductor | |
Maximum DC Collector Current | 6 A | |
Maximum Operating Temperature | +150 C | |
Minimum Operating Temperature | -65 C | |
Mounting Style | Through Hole | |
Package / Case | TO-220-3 | |
Packaging | Tube | |
Pd - Power Dissipation | 65 W | |
Product Category | Bipolar Transistors-BJT | |
RoHS | Details | |
Series | BD244C | |
Transistor Polarity | PNP | |
Unit Weight | 0.211644 oz | |
Width | 4.82 mm(Max) | |
Brand: | onsemi | |
Collector- Base Voltage VCBO: | 100 V | |
Collector- Emitter Voltage VCEO Max: | 100 V | |
Collector-Emitter Saturation Voltage: | 1.5 V | |
Configuration: | Single | |
Continuous Collector Current: | 6 A | |
DC Collector/Base Gain hfe Min: | 30 | |
Emitter- Base Voltage VEBO: | 5 V | |
Factory Pack Quantity: Factory Pack Quantity: | 50 | |
Gain Bandwidth Product fT: | 3 MHz | |
Manufacturer: | onsemi | |
Maximum DC Collector Current: | 6 A | |
Maximum Operating Temperature: | +150 C | |
Minimum Operating Temperature: | -65 C | |
Mounting Style: | Through Hole | |
Package / Case: | TO-220-3 | |
Packaging: | Tube | |
Pd - Power Dissipation: | 65 W | |
Product Category: | Bipolar Transistors-BJT | |
Product Type: | BJTs-Bipolar Transistors | |
Series: | BD244C | |
Subcategory: | Transistors | |
Technology: | Si | |
Transistor Polarity: | PNP | |
Maximum Collector Emitter Voltage | -100 V | |
Maximum Emitter Base Voltage | 5 V dc | |
Maximum Power Dissipation | 65 W | |
Minimum DC Current Gain | 30 | |
Mounting Type | Through Hole | |
Number of Elements per Chip | 1 | |
Package Type | TO-220 | |
Pin Count | 3 | |
Transistor Configuration | Single | |
Transistor Type | PNP | |
Вес, г | 1.99 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные (BJTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов