2SA1797T100Q
291 шт. со склада г.Москва, срок 8-11 дней
170 руб.
Мин. кол-во для заказа 2 шт.
от 5 шт. —
110 руб.
от 10 шт. —
88 руб.
от 100 шт. —
68 руб.
Добавить в корзину 2 шт.
на сумму 340 руб.
Альтернативные предложения2
Номенклатурный номер: 8001934551
Бренд: Нет торговой марки
Описание
Электроэлемент
100nA 50V 2W 82@500mA,2V 3A 200MHz 150mV@1A,50mA +150°C@(Tj) SOT-89 BIpolar TransIstors - BJT
Технические параметры
| Brand | ROHM Semiconductor |
| Collector- Base Voltage VCBO | -50 V |
| Collector- Emitter Voltage VCEO Max | -50 V |
| Configuration | Single |
| Continuous Collector Current | -2 A |
| DC Collector/Base Gain hfe Min | 82 |
| DC Current Gain hFE Max | 270 |
| Emitter- Base Voltage VEBO | -6 V |
| Factory Pack Quantity | 1000 |
| Gain Bandwidth Product fT | 200 MHz |
| Height | 1.5 mm |
| Length | 4.5 mm |
| Manufacturer | ROHM Semiconductor |
| Maximum DC Collector Current | -5 A |
| Maximum Operating Temperature | +150 C |
| Mounting Style | Through Hole |
| Packaging | Reel |
| Pd - Power Dissipation | 2 W |
| Product Category | Bipolar Transistors-BJT |
| RoHS | Details |
| Transistor Polarity | PNP |
| Width | 2.5 mm |
| Brand: | ROHM Semiconductor |
| Collector- Base Voltage VCBO: | 50 V |
| Collector- Emitter Voltage VCEO Max: | 50 V |
| Collector-Emitter Saturation Voltage: | 150 mV |
| Configuration: | Single |
| Continuous Collector Current: | -2 A |
| DC Collector/Base Gain hfe Min: | 82 |
| DC Current Gain hFE Max: | 270 |
| Emitter- Base Voltage VEBO: | 6 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Gain Bandwidth Product fT: | 200 MHz |
| Manufacturer: | ROHM Semiconductor |
| Maximum DC Collector Current: | 3 A |
| Maximum Operating Temperature: | +150 C |
| Mounting Style: | SMD/SMT |
| Packaging: | Reel, Cut Tape |
| Pd - Power Dissipation: | 2 W |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | PNP |
| Collector Current (Ic) | 2A |
| Collector Cut-Off Current (Icbo) | 100nA |
| Collector-Emitter Breakdown Voltage (Vceo) | 50V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 150mV@1A, 50mA |
| DC Current Gain (hFE@Ic,Vce) | 120@500mA, 2V |
| Operating Temperature | - |
| Power Dissipation (Pd) | 2W |
| Transistor Type | PNP |
| Transition Frequency (fT) | 200MHz |
| Вес, г | 0.1698 |
Техническая документация
Datasheet 2SA1797T100Q
pdf, 160 КБ
Datasheet 2SA1797T100Q
pdf, 164 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные (BJTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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