ALD110800APCL
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
77 шт. со склада г.Москва, срок 8-9 дней
5 430 руб.
от 2 шт. —
5 200 руб.
от 5 шт. —
4 930 руб.
от 10 шт. —
4 766.25 руб.
Добавить в корзину 1 шт.
на сумму 5 430 руб.
Альтернативные предложения1
Номенклатурный номер: 8001983215
Бренд: Нет торговой марки
Описание
Электроэлемент
MOSFET Quad EPAD(R) N-Ch
Технические параметры
| Brand | Advanced Linear Devices |
| Channel Mode | Depletion |
| Configuration | 4 N-Channel |
| Factory Pack Quantity | 25 |
| Forward Transconductance - Min | 0.0014 S |
| Id - Continuous Drain Current | 12 mA |
| Manufacturer | Advanced Linear Devices |
| Maximum Operating Temperature | +70 C |
| Minimum Operating Temperature | 0 C |
| Mounting Style | Through Hole |
| Number of Channels | 4 Channel |
| Package / Case | PDIP-16 |
| Packaging | Tube |
| Pd - Power Dissipation | 500 mW(1/2 W) |
| Product | MOSFET Small Signal |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 500 Ohms |
| RoHS | Details |
| Series | ALD110800A |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 4 N-Channel |
| Type | MOSFET |
| Typical Turn-Off Delay Time | 10 ns |
| Typical Turn-On Delay Time | 10 ns |
| Unit Weight | 0.036156 oz |
| Vds - Drain-Source Breakdown Voltage | 10 V |
| Vgs - Gate-Source Voltage | 10.6 V |
| Vgs th - Gate-Source Threshold Voltage | -10 mV |
| Brand: | Advanced Linear Devices |
| Channel Mode: | Depletion |
| Configuration: | Quad |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |
| Forward Transconductance - Min: | 0.0014 S |
| Id - Continuous Drain Current: | 12 mA |
| Manufacturer: | Advanced Linear Devices |
| Maximum Operating Temperature: | +70 C |
| Minimum Operating Temperature: | 0 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 4 Channel |
| Package / Case: | PDIP-16 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 500 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET Small Signal |
| Rds On - Drain-Source Resistance: | 500 Ohms |
| Series: | ALD110800A |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 4 N-Channel |
| Type: | MOSFET |
| Typical Turn-Off Delay Time: | 10 ns |
| Typical Turn-On Delay Time: | 10 ns |
| Vds - Drain-Source Breakdown Voltage: | 10 V |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Vgs th - Gate-Source Threshold Voltage: | 0 V |
| Вес, г | 1.025 |
Техническая документация
Datasheet
pdf, 104 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
Выберите регион, чтобы увидеть способы получения товара.
