2SB1260T100Q

36 шт. со склада г.Москва, срок 8-11 дней

180 руб.

Мин. кол-во для заказа 2 шт.

от 5 шт. — 130 руб.

от 10 шт. — 112 руб.

Добавить в корзину 2 шт. на сумму 360 руб.

Альтернативные предложения1

Номенклатурный номер: 8002021103

Бренд: Rohm

Электроэлемент

1uA 80V 2W 120@100mA,3V 1A 100MHz 400mV@1A,50mA PNP +150-@(Tj) SOT-89 Bipolar Transistors - BJT

Brand	ROHM Semiconductor
Collector- Base Voltage VCBO	-80 V
Collector- Emitter Voltage VCEO Max	-80 V
Configuration	Single
Continuous Collector Current	-1 A
DC Collector/Base Gain hfe Min	82
DC Current Gain hFE Max	390
Emitter- Base Voltage VEBO	-5 V
Factory Pack Quantity	1000
Gain Bandwidth Product fT	100 MHz
Height	1.5 mm
Length	4.5 mm
Manufacturer	ROHM Semiconductor
Maximum DC Collector Current	1 A
Maximum Operating Temperature	+150 C
Mounting Style	SMD/SMT
Packaging	Reel
Pd - Power Dissipation	0.5 W
Product Category	Bipolar Transistors-BJT
RoHS	Details
Series	2SB1260
Transistor Polarity	PNP
Unit Weight	0.004603 oz
Width	2.5 mm
Product Type	BJTs-Bipolar Transistors
Subcategory	Transistors
Collector Current (Ic)	1A
Collector Cut-Off Current (Icbo)	1uA
Collector-Emitter Breakdown Voltage (Vceo)	80V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)	400mV@1A, 50mA
DC Current Gain (hFE@Ic,Vce)	120@100mA, 3V
Operating Temperature	-
Power Dissipation (Pd)	2W
Transistor Type	PNP
Transition Frequency (fT)	100MHz
Вес, г	0.1305