Access Time	55ns
ECCN	EAR99
HTSUS	8542.32.0041
Memory Format	SRAM
Memory Interface	Parallel
Memory Size	64Kb (8K x 8)
Memory Type	Volatile
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	0В°C ~ 70В°C (TA)
Package	Tube
Package / Case	28-DIP (0.600"", 15.24mm)
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	28-PDIP
Technology	SRAM - Asynchronous
Voltage - Supply	2.7V ~ 5.5V
Write Cycle Time - Word, Page	55ns
Корпус:	PDIP-28
Напряжение питания - макс.:	5.5 V
Напряжение питания - мин.:	2.7 V
Address Bus Width	13bit
Low Power	Yes
Maximum Operating Supply Voltage	5.5 V
Maximum Operating Temperature	+70 °C
Maximum Random Access Time	55ns
Minimum Operating Supply Voltage	2.7 V
Minimum Operating Temperature	0 °C
Number of Bits per Word	8bit
Number of Words	8k
Organisation	8k x 8 bit
Package Type	PDIP
Pin Count	28
Timing Type	Asynchronous
Width	13.21mm
Access Time:	55 ns
Brand:	Alliance Memory
Factory Pack Quantity: Factory Pack Quantity:	15
Interface Type:	Parallel
Manufacturer:	Alliance Memory
Maximum Operating Temperature:	+70 C
Memory Size:	64 kbit
Memory Type:	SDR
Minimum Operating Temperature:	0 C
Mounting Style:	Through Hole
Organization:	8 k x 8
Package / Case:	PDIP-28
Packaging:	Tube
Product Category:	SRAM
Product Type:	SRAM
Series:	AS6C6264
Subcategory:	Memory & Data Storage
Supply Current - Max:	45 mA
Supply Voltage - Max:	5.5 V
Supply Voltage - Min:	2.7 V
Type:	Asynchronous
Вес, г	4.81

AS6C6264-55PCN, IC: SRAM memory; 8kx8bit; 2.7?5.5V; 55ns; DIP28; parallel; 600mils