RFD3055LESM9A, Транзистор: N-MOSFET, полевой, 60В, 11А, 38Вт, DPAK

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400 руб.

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Номенклатурный номер: 8002515401

Артикул: RFD3055LESM9A

Описание Транзистор: N-MOSFET, полевой, 60В, 11А, 38Вт, DPAK Характеристики

Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	11 A
Maximum Drain Source Resistance	107 mΩ
Maximum Drain Source Voltage	60 V
Maximum Gate Source Voltage	-16 V, +16 V
Maximum Operating Temperature	+175 °C
Maximum Power Dissipation	38 W
Minimum Gate Threshold Voltage	1V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	DPAK(TO-252)
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	9.4 nC @ 10 V
Width	6.22mm
Brand:	onsemi/Fairchild
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	2500
Fall Time:	39 ns
Id - Continuous Drain Current:	11 A
Manufacturer:	onsemi
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	DPAK-3
Part # Aliases:	RFD3055LESM9A_NL
Pd - Power Dissipation:	38 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	11.3 nC
Rds On - Drain-Source Resistance:	107 mOhms
Rise Time:	105 ns
Series:	RFD3055LESM
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Type:	MOSFET
Typical Turn-Off Delay Time:	22 ns
Typical Turn-On Delay Time:	8 ns
Vds - Drain-Source Breakdown Voltage:	60 V
Vgs - Gate-Source Voltage:	-16 V, +16 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Вес, г	0.26