IRF820APBF, Транзистор: N-MOSFET, полевой, 500В, 1,6А, 50Вт, TO220AB
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Описание
Полупроводники\Транзисторы\Транзисторы униполярные\Транзисторы с каналом типа N\Транзисторы с каналом N THT
Описание Транзистор: N-MOSFET, полевой, 500В, 1,6А, 50Вт, TO220AB Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Base Product Number | IRF820 -> |
| Current - Continuous Drain (Id) @ 25В°C | 2.5A (Tc) |
| Drain to Source Voltage (Vdss) | 500V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| ECCN | EAR99 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 340pF @ 25V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Other Related Documents | http://www.vishay.com/docs/88869/packaging.pdf |
| Package | Tube |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 50W (Tc) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 1.5A, 10V |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | TO-220AB |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | В±30V |
| Vgs(th) (Max) @ Id | 4.5V @ 250ВµA |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Through Hole |
| Maximum Continuous Drain Current (A) | 2.5 |
| Maximum Drain Source Resistance (mOhm) | 3000 10V |
| Maximum Drain Source Voltage (V) | 500 |
| Maximum Gate Source Voltage (V) | ±30 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 50000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Through Hole |
| Number of Elements per Chip | 1 |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Product Category | Power MOSFET |
| Standard Package Name | TO-220 |
| Supplier Package | TO-220AB |
| Tab | Tab |
| Typical Fall Time (ns) | 13 |
| Typical Gate Charge @ 10V (nC) | 17(Max) |
| Typical Gate Charge @ Vgs (nC) | 17(Max)10V |
| Typical Input Capacitance @ Vds (pF) | 340 25V |
| Typical Rise Time (ns) | 12 |
| Typical Turn-Off Delay Time (ns) | 16 |
| Typical Turn-On Delay Time (ns) | 8.1 |
| FET Feature | - |
| Manufacturer | Vishay Siliconix |
| Packaging | Tube |
| Series | - |
| Maximum Continuous Drain Current | 2.5 A |
| Maximum Drain Source Resistance | 3 Ω |
| Maximum Drain Source Voltage | 500 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 50 W |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature | -55 °C |
| Package Type | TO-220AB |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 17 nC @ 10 V |
| Width | 4.7mm |
| Вес, г | 2.72 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 135 КБ
Datasheet IRF820APBF
pdf, 281 КБ
Datasheet IRF820APBF
pdf, 286 КБ
Datasheet IRF820APBF
pdf, 156 КБ
Документация
pdf, 278 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
