TN2106N3-G
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см. техническую документацию
см. техническую документацию
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Описание
Электроэлемент
MOSFET, N-CH, 60V, 0.3A, TO-226AA; Transistor Polarity:N Channel; Continuous Drain Current Id:300mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):2.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Pow
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 300mA(Tj) |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V |
| Manufacturer | Microchip Technology |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | TO-226-3, TO-92-3(TO-226AA) |
| Packaging | Bulk |
| Part Status | Active |
| Power Dissipation (Max) | 740mW(Tc) |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 500mA, 10V |
| Series | - |
| Supplier Device Package | TO-92-3 |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Base Product Number | TN2106 -> |
| ECCN | EAR99 |
| HTSUS | 8541.21.0095 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Package | Bulk |
| PCN Assembly/Origin | http://www.microchip.com/mymicrochip/NotificationD |
| PCN Packaging | http://www.microchip.com/mymicrochip/NotificationD |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Brand: | Microchip Technology |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Fall Time: | 5 ns |
| Forward Transconductance - Min: | 150 mS |
| Id - Continuous Drain Current: | 300 mA |
| Manufacturer: | Microchip |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-92-3 |
| Packaging: | Bulk |
| Pd - Power Dissipation: | 740 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET Small Signal |
| Rds On - Drain-Source Resistance: | 2.5 Ohms |
| Rise Time: | 5 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | FET |
| Typical Turn-Off Delay Time: | 6 ns |
| Typical Turn-On Delay Time: | 3 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 600 mV |
| Вес, г | 0.4536 |
Техническая документация
Datasheet TN2106K1-G
pdf, 818 КБ
Datasheet TN2106N3-G
pdf, 811 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
