DN2450K4-G, MOSFET MOSFET DEPLETION MODE 500V 10 Ohms
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Trans MOSFET N-CH 500V 0.35A 3-Pin(2+Tab) DPAK T/R
Технические параметры
| Brand: | Microchip Technology |
| Channel Mode: | Depletion |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2000 |
| Forward Transconductance - Min: | 500 S |
| Id - Continuous Drain Current: | 350 mA |
| Manufacturer: | Microchip |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Moisture Sensitive: | Yes |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-252-3 |
| Pd - Power Dissipation: | 2.5 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Rds On - Drain-Source Resistance: | 10 Ohms |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 500 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 3.5 V |
| Automotive | No |
| Channel Mode | Depletion |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 0.35 |
| Maximum Diode Forward Voltage (V) | 1.8 |
| Maximum Drain Source Resistance (mOhm) | 10000@0V |
| Maximum Drain Source Voltage (V) | 500 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum IDSS (uA) | 700000(Min) |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Power Dissipation (mW) | 2500 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 2.5 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 1 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Operating Junction Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 2 |
| Pin Count | 3 |
| PPAP | No |
| Process Technology | VDMOS |
| Product Category | Power MOSFET |
| Standard Package Name | TO-252 |
| Supplier Package | DPAK |
| Tab | Tab |
| Typical Fall Time (ns) | 15(Max) |
| Typical Input Capacitance @ Vds (pF) | 150@25V |
| Typical Output Capacitance (pF) | 40 |
| Typical Reverse Recovery Time (ns) | 800 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 15@25V |
| Typical Rise Time (ns) | 20(Max) |
| Typical Turn-Off Delay Time (ns) | 15(Max) |
| Typical Turn-On Delay Time (ns) | 15(Max) |
| Current - Continuous Drain (Id) @ 25В°C | 350mA(Tj) |
| Drain to Source Voltage (Vdss) | 500V |
| Drive Voltage (Max Rds On, Min Rds On) | 0V |
| FET Feature | Depletion Mode |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 200pF @ 25V |
| Manufacturer | Microchip Technology |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | TO-252-3, DPak(2 Leads+Tab), SC-63 |
| Power Dissipation (Max) | 2.5W(Ta) |
| Rds On (Max) @ Id, Vgs | 10Ohm @ 300mA, 0V |
| Series | - |
| Supplier Device Package | TO-252, (D-Pak) |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | - |
| Вес, г | 0.33 |
Техническая документация
Datasheet
pdf, 626 КБ
Datasheet DN2450K4-G
pdf, 624 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
