MJE350, Trans GP BJT PNP 300V 0.5A 2800mW 3-Pin(3+Tab) SOT-32 Tube

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15300 шт., срок 9-11 недель

42 руб.

Мин. кол-во для заказа 710 шт.

от 1049 шт. — 40 руб.

Добавить в корзину 710 шт. на сумму 29 820 руб.

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Номенклатурный номер: 8003194995

Артикул: MJE350

Страна происхождения: КИТАЙ

Бренд / Производитель: STMicroelectronics

Semiconductor - Discrete > Transistors > BJT - General Purpose

Биполярный (BJT) транзистор PNP 300V 500mA 20.8W Through Hole SOT-32-3

Base Product Number	MJE350 ->
Current - Collector (Ic) (Max)	500mA
Current - Collector Cutoff (Max)	100ВµA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 50mA, 10V
ECCN	EAR99
HTSUS	8541.29.0095
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	150В°C (TJ)
Other Related Documents	http://www.st.com/web/catalog/sense_power/FM100/CL
Package	Tube
Package / Case	TO-225AA, TO-126-3
Power - Max	20.8W
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	SOT-32-3
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	300V
кол-во в упаковке	50
Brand	STMicroelectronics
Collector- Base Voltage VCBO	3 V
Collector- Emitter Voltage VCEO Max	300 V
Collector-Emitter Saturation Voltage	0.5 V
Configuration	Single
Continuous Collector Current	0.5 A
DC Collector/Base Gain hfe Min	30
DC Current Gain hFE Max	240
Emitter- Base Voltage VEBO	3 V
Factory Pack Quantity	2000
Height	10.8 mm(Max)
Length	7.8 mm(Max)
Manufacturer	STMicroelectronics
Maximum DC Collector Current	0.5 A
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-65 C
Mounting Style	Through Hole
Packaging	Tube
Pd - Power Dissipation	20.8 W
Product Category	Bipolar Transistors-BJT
RoHS	Details
Series	500V Transistors
Transistor Polarity	PNP
Width	2.7 mm(Max)