TP65H050WS, MOSFET 650V, 50mOhm
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
650V GaN FETs in TO-247 PackagesTransphorm 650V GaN FETs in TO-247 Packages combine state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies. The devices offer superior reliability and performance with improved efficiency over silicon. The FETs have a lower gate charge, lower crossover loss, and a smaller reverse recovery charge.
Технические параметры
| Brand: | Transphorm |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |
| Fall Time: | 11 ns |
| Id - Continuous Drain Current: | 36 A |
| Manufacturer: | Transphorm |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-247-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 119 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 24 nC |
| Rds On - Drain-Source Resistance: | 60 mOhms |
| Rise Time: | 11 ns |
| Series: | TP65H |
| Subcategory: | MOSFETs |
| Technology: | GaN |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 86 ns |
| Typical Turn-On Delay Time: | 51 ns |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 3.3 V |
| Current - Continuous Drain (Id) @ 25В°C | 34A (Tc) |
| Drain to Source Voltage (Vdss) | 650V |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| ECCN | EAR99 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 400V |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Package | Tube |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 119W (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 22A, 10V |
| RoHS Status | RoHS Compliant |
| Supplier Device Package | TO-247-3 |
| Technology | GaNFET (Cascode Gallium Nitride FET) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 4.8V @ 700ВµA |
| Вес, г | 6 |
Техническая документация
Datasheet TP65H050WS
pdf, 1091 КБ
Datasheet TP65H050WS
pdf, 1285 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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