BSZ037N06LS5ATMA1, MOSFET TRENCH 40 - 100V

BSZ037N06LS5ATMA1, MOSFET TRENCH 40 - 100V
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480 руб.
от 10 шт.380 руб.
от 100 шт.282 руб.
от 250 шт.242.58 руб.
Добавить в корзину 1 шт. на сумму 480 руб.
Номенклатурный номер: 8005239234
Артикул: BSZ037N06LS5ATMA1

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET
USB-C Chargers & Adapters

Infineon Technologies offers tailor-made semiconductors considering customers" priorities - price/performance vs. (ultra) high power density. The portfolio comprises the entire USB-C source product chain, ranging from HV/LV power switches to PWM controllers, USB-C controllers for power delivery as well as ESD protection devices.

Технические параметры

Brand: Infineon Technologies
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: Factory Pack Quantity: 5000
Fall Time: 5 ns
Forward Transconductance - Min: 33 S
Id - Continuous Drain Current: 40 A
Manufacturer: Infineon
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Package / Case: TSDSON-8
Part # Aliases: BSZ037N06LS5 SP002035218
Pd - Power Dissipation: 69 W
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 35 nC
Rds On - Drain-Source Resistance: 4.2 mOhms
Rise Time: 5 ns
Series: OptiMOS
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 26 ns
Typical Turn-On Delay Time: 9 ns
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs - Gate-Source Voltage: -20 V, +20 V
Vgs th - Gate-Source Threshold Voltage: 1.7 V
Вес, г 0.04

Техническая документация

Дополнительная информация

Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов