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SI7852DP-T1-E3, MOSFET 80V Vds 20V Vgs PowerPAK SO-8

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740 руб.

от 10 шт. — 580 руб.

от 25 шт. — 562 руб.

от 100 шт. — 434.61 руб.

Добавить в корзину 1 шт. на сумму 740 руб.

Номенклатурный номер: 8005284376

Артикул: SI7852DP-T1-E3

Бренд: VISHAY INTERTECHNOLOGY INC.

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

SI78 N-Channel (D-S) MOSFETs Vishay Semiconductors SI78 N-Channel (D-S) MOSFETs are available in a new low thermal resistance PowerPAK® package with a low 1.07mm profile. These N-Channel (D-S) MOSFETs are PWM optimized, 100% Rg tested, halogen-free, and RoHS compliant. The SI78 MOSFETs are used in DC/DC converters, primary side switches for DC/DC applications, and synchronous rectifiers.

Технические параметры

Brand:	Vishay Semiconductors
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity:	3000
Fall Time:	31 ns
Forward Transconductance - Min:	25 S
Id - Continuous Drain Current:	7.6 A
Manufacturer:	Vishay
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	PowerPAK-SO-8
Part # Aliases:	SI7852DP-E3
Pd - Power Dissipation:	1.9 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	34 nC
Rds On - Drain-Source Resistance:	16.5 mOhms
Rise Time:	11 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N Channel
Typical Turn-Off Delay Time:	40 ns
Typical Turn-On Delay Time:	17 ns
Vds - Drain-Source Breakdown Voltage:	80 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Вес, г	0.5066