IRF510PBF-BE3, MOSFET 100V N-CH HEXFET D2-PAK

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Номенклатурный номер: 8005289109

Артикул: IRF510PBF-BE3

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

Brand:	Vishay/Siliconix
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity:	1000
Fall Time:	9.4 ns
Id - Continuous Drain Current:	5.6 A
Manufacturer:	Vishay
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package/Case:	TO-220-3
Packaging:	Tube
Part # Aliases:	IRF510PBF
Pd - Power Dissipation:	43 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	8.3 nC
Rds On - Drain-Source Resistance:	540 mOhms
Rise Time:	16 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	15 ns
Typical Turn-On Delay Time:	6.9 ns
Vds - Drain-Source Breakdown Voltage:	100 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Вес, г	175

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