BCP54-16-TP, Bipolar Transistors - BJT NPN Plastic-Encapsulate Transistors

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150 руб.

от 10 шт. — 110 руб.

от 100 шт. — 44 руб.

от 1000 шт. — 32.26 руб.

Добавить в корзину 1 шт. на сумму 150 руб.

Номенклатурный номер: 8005354302

Артикул: BCP54-16-TP

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Биполярные транзисторы - BJT NPN,Transistors,SOT-223 Package

Brand:	Micro Commercial Components(MCC)
Collector- Base Voltage VCBO:	45 V
Collector- Emitter Voltage VCEO Max:	45 V
Collector-Emitter Saturation Voltage:	500 mV
Configuration:	Single
DC Collector/Base Gain hfe Min:	63 at 150 mA, 2 V
DC Current Gain hFE Max:	250 at 150 mA, 2 V
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity:	2500
Gain Bandwidth Product fT:	100 MHz
Manufacturer:	Micro Commercial Components(MCC)
Maximum DC Collector Current:	1 A
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Package / Case:	SOT-223-4
Pd - Power Dissipation:	1.5 W
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
Collector Current (Ic)	1A
Collector Cut-Off Current (Icbo)	100nA
Collector-Emitter Breakdown Voltage (Vceo)	45V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)	500mV@500mA, 50mA
DC Current Gain (hFE@Ic,Vce)	63@150mA, 2V
Operating Temperature	-55℃~+150℃@(Tj)
Power Dissipation (Pd)	300mW
Transistor Type	NPN
Transition Frequency (fT)	100MHz
Вес, г	0.12