TK5R3A06PL,S4X, MOSFET TO-220SIS PD=36W 1MHz PWR MOSFET TRNS
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
U-MOSIX-H MOSFETs Toshiba U-MOSIX-H Low Voltage N-Channel Enhancement Mode MOSFETs are high-efficiency MOSFETs that are specifically designed for use in the secondary side of AC-DC power supplies. This includes notebook PC adapters, game consoles, servers, desktop PCs, and flat-panel displays. It also includes DC-DC power supplies for communication equipment, servers, and data centers. The MOSFETs feature high-speed switching, small gate charge, and low drain-source on-resistance. These MOSFETs are fabricated with the Gen-8 and Gen-9 trench MOS processes. Toshiba U-MOSIX-H Low Voltage MOSFETs will help improve the efficiency of power supplies.
Технические параметры
| Brand: | Toshiba |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 50 |
| Fall Time: | 6 ns |
| Id - Continuous Drain Current: | 17.3 A |
| Manufacturer: | Toshiba |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-220-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 45 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 45 nC |
| Rds On - Drain-Source Resistance: | 200 mOhms |
| Rise Time: | 15 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 100 ns |
| Typical Turn-On Delay Time: | 50 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 3.5 V |
| Вес, г | 2 |
Техническая документация
Datasheet
pdf, 489 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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