MJD122-1

Изображения служат только для ознакомления,
см. техническую документацию

2794 шт., срок 7-9 недель

310 руб.

от 75 шт. — 220 руб.

от 150 шт. — 169 руб.

от 1050 шт. — 108.72 руб.

Добавить в корзину 1 шт. на сумму 310 руб.

Альтернативные предложения2

Номенклатурный номер: 8005944349

POWER BIPOLAR TRANSISTOR, 5A I(C), 100V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-251AA, PLASTIC/EPOXY, 3 PIN

Brand:	STMicroelectronics
Collector- Base Voltage VCBO:	100 V
Collector- Emitter Voltage VCEO Max:	100 V
Configuration:	Single
DC Collector/Base Gain hfe Min:	100
DC Current Gain hFE Max:	12000
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity: Factory Pack Quantity:	75
Manufacturer:	STMicroelectronics
Maximum Collector Cut-off Current:	10 uA
Maximum DC Collector Current:	5 A
Maximum Operating Temperature:	+150 C
Mounting Style:	Through Hole
Package / Case:	TO-251-3
Packaging:	Tube
Pd - Power Dissipation:	20 W
Product Category:	Darlington Transistors
Product Type:	Darlington Transistors
Series:	MJD122
Subcategory:	Transistors
Transistor Polarity:	NPN
Brand	STMicroelectronics
Collector- Base Voltage VCBO	100 V
Collector- Emitter Voltage VCEO Max	100 V
Configuration	Single
DC Collector/Base Gain hfe Min	100
DC Current Gain hFE Max	12000
Emitter- Base Voltage VEBO	5 V
Factory Pack Quantity	3000
Height	7.2 mm
Length	6.6 mm
Manufacturer	STMicroelectronics
Maximum Collector Cut-off Current	10 uA
Maximum DC Collector Current	5 A
Maximum Operating Temperature	+150 C
Mounting Style	Through Hole
Package / Case	TO-252-2
Packaging	Tube
Pd - Power Dissipation	20 W
Product Category	Darlington Transistors
Series	MJD122
Transistor Polarity	NPN
Width	2.4 mm