SIHD6N80AE-GE3, Силовой МОП-транзистор, N Канал, 800 В, 5 А, 0.826 Ом, TO-252 (DPAK), Surface Mount
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Описание
E Series High Voltage MOSFETs Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific on-resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low on-resistance (RDS(ON)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). E series MOSFETs are available in 800VDS high-voltage variants with drain current (ID) that ranges from 2.8A to 17.4A. Also, new Vishay Siliconix 600V E Series MOSFETs have been added to the PowerPAK® 8x8 surface mount package. Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Технические параметры
Brand: | Vishay Semiconductors |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: | 3000 |
Fall Time: | 20 ns |
Forward Transconductance - Min: | 1.9 S |
Id - Continuous Drain Current: | 5 A |
Manufacturer: | Vishay |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package/Case: | DPAK-3(TO-252-3) |
Pd - Power Dissipation: | 62.5 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 15 nC |
Rds On - Drain-Source Resistance: | 950 mOhms |
Rise Time: | 10 ns |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 16 ns |
Typical Turn-On Delay Time: | 12 ns |
Vds - Drain-Source Breakdown Voltage: | 800 V |
Vgs - Gate-Source Voltage: | -30 V, +30 V |
Vgs th - Gate-Source Threshold Voltage: | 4 V |
Вес, г | 0.123 |
Техническая документация
Datasheet
pdf, 200 КБ
Трёхмерное изображение изделия
pdf, 71 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов