IDM10G120C5XTMA1
см. техническую документацию
Описание
5th Generation thinQ! ™ 1200V SiC Schottky diode suitable for use in solar inverters, uninterruptable power supplies, motor drives and power factor correction. Benefits of using Schottky diode are System efficiency improvement over Si diodes, system cost / size savings due to reduced cooling requirements, enabling higher frequency / increased power density solutions, higher system reliability due to lower operating temperatures and reduced EMI.
• Revolutionary semiconductor material - silicon carbide
• No reverse recovery current / no forward recovery
• Temperature independent switching behaviour
• Low forward voltage even at high operating temperature
• Tight forward voltage distribution
• Excellent thermal performance
• Extended surge current capability
• Specified dv/dt ruggedness
• Qualified according to JEDEC for target applications
Технические параметры
| Average Forward Current | 38А |
| Repetitive Peak Reverse Voltage | 1.2кВ |
| Количество Выводов | 2 Вывода |
| Линейка Продукции | thinQ 5G 1200V |
| Максимальная Рабочая Температура | 175 C |
| Полный Емкостной Заряд Qc | 41нКл |
| Стиль Корпуса Диода | TO-252 |
| Тип Монтажа Диода | SMD(Поверхностный Монтаж) |
| Вес, г | 0.34 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Диоды Шоттки»
Типы корпусов импортных диодов
