IRF510STRRPBF

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460 руб.

от 10 шт. — 350 руб.

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от 800 шт. — 184.04 руб.

Добавить в корзину 1 шт. на сумму 460 руб.

Номенклатурный номер: 8007449596

Discrete Semiconductor Products\Transistors - FETs, MOSFETs - Single

N-Channel 100V 5.6A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount TO-263 (DВІPak)

Base Product Number	IRF510 ->
Current - Continuous Drain (Id) @ 25В°C	5.6A (Tc)
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On, Min Rds On)	10V
ECCN	EAR99
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	8.3nC @ 10V
HTSUS	8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds	180pF @ 25V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Operating Temperature	-55В°C ~ 175В°C (TJ)
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	TO-263-3, DВІPak (2 Leads + Tab), TO-263AB
Power Dissipation (Max)	3.7W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs	540mOhm @ 3.4A, 10V
RoHS Status	ROHS3 Compliant
Supplier Device Package	TO-263 (DВІPak)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	4V @ 250ВµA
Brand:	Vishay Semiconductors
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity:	800
Id - Continuous Drain Current:	5.6 A
Manufacturer:	Vishay
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	D2PAK-3(TO-263-3)
Pd - Power Dissipation:	43 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	8.3 nC
Rds On - Drain-Source Resistance:	540 mOhms
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	2 V