BS270, Транзистор: N-MOSFET, полевой, 60В, 0,4А, 0,625Вт, TO92

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Номенклатурный номер: 8007487512

Артикул: BS270

Описание Транзистор: N-MOSFET, полевой, 60В, 0,4А, 0,625Вт, TO92 Характеристики

Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	400 mA
Maximum Drain Source Resistance	3.5 Ω
Maximum Drain Source Voltage	60 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	625 mW
Minimum Gate Threshold Voltage	1V
Minimum Operating Temperature	-55 °C
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	TO-92
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Width	3.93mm
Automotive	No
Configuration	Single
ECCN (US)	EAR99
EU RoHS	Compliant
Lead Shape	Through Hole
Maximum Continuous Drain Current (A)	0.4
Maximum Drain Source Resistance (mOhm)	2000@10V
Maximum Drain Source Voltage (V)	60
Maximum Gate Source Voltage (V)	±20
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	625
Minimum Operating Temperature (°C)	-55
Mounting	Through Hole
Packaging	Bag
Part Status	Active
PCB changed	3
PPAP	No
Process Technology	DMOS
Product Category	Power MOSFET
Standard Package Name	TO
Supplier Package	TO-92
Typical Input Capacitance @ Vds (pF)	20@25V
Вес, г	0.21