STF100N10F7, N-Channel MOSFET, 45 A, 100 V, 3-Pin TO-220FP STF100N10F7
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Описание
Semiconductors\Discrete Semiconductors\MOSFETs
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 45 A |
| Maximum Drain Source Resistance | 8 mΩ |
| Maximum Drain Source Voltage | 100 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 30 W |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-220FP |
| Pin Count | 3 |
| Series | STripFET H7 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 61 nC @ 10 V |
| Width | 4.6mm |
| Base Product Number | STF100 -> |
| Current - Continuous Drain (Id) @ 25В°C | 45A (Tc) |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| ECCN | EAR99 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 61nC @ 10V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 4369pF @ 50V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Operating Temperature | -55В°C ~ 175В°C (TJ) |
| Package | Tube |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 30W (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 22.5A, 10V |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | TO-220FP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 4.5V @ 250ВµA |
| Drain Source On State Resistance | 0.0068Ом |
| Power Dissipation | 30Вт |
| Количество Выводов | 3вывод(-ов) |
| Линейка Продукции | DeepGATE STripFET VII |
| Максимальная Рабочая Температура | 175 C |
| Монтаж транзистора | Through Hole |
| Напряжение Измерения Rds(on) | 10В |
| Напряжение Истока-стока Vds | 100В |
| Непрерывный Ток Стока | 45А |
| Полярность Транзистора | N Канал |
| Пороговое Напряжение Vgs | 4.5В |
| Рассеиваемая Мощность | 30Вт |
| Сопротивление во Включенном Состоянии Rds(on) | 0.0068Ом |
| Стиль Корпуса Транзистора | TO-220FP |
| Уровень Чувствительности к Влажности (MSL) | MSL 1-Безлимитный |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Fall Time: | 15 ns |
| Id - Continuous Drain Current: | 45 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-220-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 30 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 61 nC |
| Rds On - Drain-Source Resistance: | 8 mOhms |
| Rise Time: | 40 ns |
| Series: | STF100N10F7 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | STripFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 46 ns |
| Typical Turn-On Delay Time: | 27 ns |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Automotive | No |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Through Hole |
| Maximum Continuous Drain Current (A) | 80 |
| Maximum Drain Source Resistance (mOhm) | 8@10V |
| Maximum Drain Source Voltage (V) | 100 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 4.5 |
| Maximum IDSS (uA) | 10 |
| Maximum Operating Temperature (°C) | 175 |
| Maximum Power Dissipation (mW) | 150000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Through Hole |
| Packaging | Tube |
| Part Status | Active |
| PCB changed | 3 |
| PPAP | No |
| Process Technology | STripFET F7 |
| Product Category | Power MOSFET |
| Standard Package Name | TO |
| Supplier Package | TO-220FP |
| Supplier Temperature Grade | Industrial |
| Tab | Tab |
| Typical Fall Time (ns) | 15 |
| Typical Gate Charge @ 10V (nC) | 56 |
| Typical Gate Charge @ Vgs (nC) | 56@10V |
| Typical Input Capacitance @ Vds (pF) | 4369@50V |
| Typical Rise Time (ns) | 40 |
| Typical Turn-Off Delay Time (ns) | 46 |
| Typical Turn-On Delay Time (ns) | 27 |
| Вес, г | 9 |
Техническая документация
Datasheet
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Datasheet STF100N10F7
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Datasheet STF100N10F7
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Datasheet STF100N10F7
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Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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