SQ4940AEY-T1_GE3, Транзистор: N-MOSFET x2; TrenchFET®; полевой; 40В; 5,3А; Idm: 32А

SQ4940AEY-T1_GE3, Транзистор: N-MOSFET x2; TrenchFET®; полевой; 40В; 5,3А; Idm: 32А
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320 руб.
от 5 шт.250 руб.
от 25 шт.192 руб.
от 100 шт.159.84 руб.
Добавить в корзину 1 шт. на сумму 320 руб.
Номенклатурный номер: 8011741129
Артикул: SQ4940AEY-T1_GE3


48V DC/DC Converters Vishay 48V DC/DC Converters are used in the products that need to remain 12V battery load while 48V battery is used in the vehicles. These converters can bring down 48V-12V, so the converter is a significant application for future cars. Different topologies are made possible with these devices like multiphase coupled and non-coupled inductors. Vishay offers a broad portfolio of solutions with standard devices like MOSFETs, diodes, resistors, capacitors, inductors, and customized magnetic solutions.

Технические параметры

Brand: Vishay Semiconductors
Channel Mode: Enhancement
Configuration: Dual
Factory Pack Quantity: 2500
Fall Time: 9 ns
Id - Continuous Drain Current: 8 A
Manufacturer: Vishay
Maximum Operating Temperature: +175 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 2 Channel
Package/Case: SOIC-8
Part # Aliases: SQ4940AEY-T1_BE3
Pd - Power Dissipation: 4 W
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 43 nC
Qualification: AEC-Q101
Rds On - Drain-Source Resistance: 20 mOhms, 20 mOhms
Rise Time: 13 ns
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: N-Channel
Transistor Type: 2 N-Channel
Typical Turn-Off Delay Time: 20 ns
Typical Turn-On Delay Time: 8 ns
Vds - Drain-Source Breakdown Voltage: 40 V
Vgs - Gate-Source Voltage: -20 V, +20 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
Вес, г 0.12

Техническая документация

Дополнительная информация

Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов