IRF9Z24NSTRLPBF, Транзистор: P-MOSFET; полевой; -55В; -8,5А; Idm: -48А; 45Вт; D2PAK

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см. техническую документацию

260 руб.

210 руб.

от 10 шт. — 180 руб.

от 30 шт. — 161 руб.

от 100 шт. — 143.16 руб.

Добавить в корзину 1 шт. на сумму 210 руб.

Номенклатурный номер: 8017566020

Артикул: IRF9Z24NSTRLPBF

Страна происхождения: КИТАЙ

Бренд / Производитель: INFINEON TECHNOLOGIES AG.

Brand	Infineon Technologies
Configuration	Single
Factory Pack Quantity	800
Id - Continuous Drain Current	12 A
Manufacturer	Infineon
Mounting Style	SMD/SMT
Number Of Channels	1 Channel
Package / Case	TO-252-3
Packaging	Cut Tape or Reel
Part # Aliases	SP001554552
Pd - Power Dissipation	45 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	12.7 nC
Rds On - Drain-Source Resistance	175 mOhms
Subcategory	MOSFETs
Technology	Si
Transistor Polarity	P-Channel
Transistor Type	1 P-Channel
Vds - Drain-Source Breakdown Voltage	55 V
Vgs - Gate-Source Voltage	20 V
Brand:	Infineon Technologies
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	800
Id - Continuous Drain Current:	12 A
Manufacturer:	Infineon
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	TO-252-3
Packaging:	Reel, Cut Tape, MouseReel
Part # Aliases:	IRF9Z24NSTRLPBF SP001554552
Pd - Power Dissipation:	45 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	19 nC
Rds On - Drain-Source Resistance:	175 mOhms
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	P-Channel
Transistor Type:	1 P-Channel
Vds - Drain-Source Breakdown Voltage:	55 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Вес, г	2.02

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