MMDT3946-7-F, 200mW 100@10mA,1V 200mA 1PCSNPN&1PCSPNP -55°C~+150°C@(Tj) SOT-363-6 BIpolar TransIstors - BJT

Фото 1/4 MMDT3946-7-F, 200mW 100@10mA,1V 200mA 1PCSNPN&1PCSPNP -55°C~+150°C@(Tj) SOT-363-6 BIpolar TransIstors - BJT
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см. техническую документацию
16 руб.
Кратность заказа 10 шт.
от 100 шт.10 руб.
от 300 шт.7.60 руб.
Добавить в корзину 10 шт. на сумму 160 руб.
Номенклатурный номер: 8017602032
Артикул: MMDT3946-7-F
Бренд: DIODES INC.

Описание

Trans GP BJT NPN/PNP 40V 0.2A 200mW 6-Pin SOT-363 T/R

Технические параметры

Brand Diodes Incorporated
Collector- Base Voltage VCBO 40 V
Collector- Emitter Voltage VCEO Max 40 V
Collector-Emitter Saturation Voltage 0.3 V
Configuration Dual
Continuous Collector Current 0.2 A
DC Current Gain HFE Max 300
Emitter- Base Voltage VEBO 6 V
Factory Pack Quantity 3000
Gain Bandwidth Product FT 300 MHz
Manufacturer Diodes Incorporated
Maximum DC Collector Current 0.2 A
Maximum Operating Temperature +150 C
Minimum Operating Temperature -55 C
Mounting Style SMD/SMT
Package / Case SOT-363-6
Packaging Cut Tape or Reel
Pd - Power Dissipation 200 mW
Product Category Bipolar Transistors-BJT
Product Type BJTs-Bipolar Transistors
Series MMDT39
Subcategory Transistors
Transistor Polarity NPN, PNP
Automotive No
ECCN (US) EAR99
EU RoHS Compliant
Lead Shape Gull-wing
Maximum Base Emitter Saturation Voltage (V) 0.85@1mA@10mA|0.95@5mA@50mA
Maximum Collector Base Voltage (V) 60@NPN|40@PNP
Maximum Collector-Emitter Voltage (V) 40
Maximum DC Collector Current (A) 0.2
Maximum Emitter Base Voltage (V) 6@NPN|5@PNP
Maximum Operating Temperature (°C) 150
Maximum Power Dissipation (mW) 200
Maximum Transition Frequency (MHz) 300(Min)@NPN|250(Min)@PNP
Minimum Operating Temperature (°C) -55
Mounting Surface Mount
Number of Elements per Chip 2
Part Status Active
PCB changed 6
Pin Count 6
PPAP No
Standard Package Name SOT
Supplier Package SOT-363
Type NPN|PNP
Brand: Diodes Incorporated
Collector- Base Voltage VCBO: 60 V, 40 V
Collector- Emitter Voltage VCEO Max: 40 V
Collector-Emitter Saturation Voltage: 300 mV, 400 mV
Configuration: Dual
Continuous Collector Current: 200 mA
DC Current Gain hFE Max: 300
Emitter- Base Voltage VEBO: 6 V, 5 V
Factory Pack Quantity: Factory Pack Quantity: 3000
Gain Bandwidth Product fT: 300 MHz, 250 MHz
Manufacturer: Diodes Incorporated
Maximum DC Collector Current: 200 mA
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Package / Case: SOT-363-6
Pd - Power Dissipation: 200 mW
Product Category: Bipolar Transistors-BJT
Product Type: BJTs-Bipolar Transistors
Series: MMDT39
Subcategory: Transistors
Technology: Si
Transistor Polarity: NPN, PNP
Maximum Collector Base Voltage 60 V
Maximum Collector Emitter Voltage 40 V
Maximum Emitter Base Voltage 6 V
Maximum Power Dissipation 200 mW
Minimum DC Current Gain 100
Mounting Type Surface Mount
Package Type SOT-363(SC-88)
Transistor Configuration Isolated
Transistor Type NPN/PNP
Вес, г 0.04

Техническая документация

Datasheet
pdf, 1680 КБ
Datasheet
pdf, 235 КБ
Datasheet
pdf, 362 КБ
Datasheet
pdf, 209 КБ

Дополнительная информация

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