DMC1229UFDB-7, 12V 1.4W 1V@250uA 1PCSN-Channel& 1PCSP-Channel -55°C~+150°C@(Tj) U-DFN2020-6B MOSFETs

DMC1229UFDB-7, 12V 1.4W 1V@250uA 1PCSN-Channel& 1PCSP-Channel -55°C~+150°C@(Tj) U-DFN2020-6B MOSFETs
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99 руб.
59 руб.
Кратность заказа 5 шт.
от 50 шт.37 руб.
от 150 шт.32 руб.
от 500 шт.26.57 руб.
Добавить в корзину 5 шт. на сумму 295 руб.
Номенклатурный номер: 8017625174
Артикул: DMC1229UFDB-7


Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.

Технические параметры

Brand: Diodes Incorporated
Channel Mode: Enhancement
Configuration: Dual
Factory Pack Quantity: Factory Pack Quantity: 3000
Fall Time: 4.1 ns, 26.4 ns
Forward Transconductance - Min: 5.5 S, 6.5 S
Id - Continuous Drain Current: 3.8 A, 5.6 A
Manufacturer: Diodes Incorporated
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 2 Channel
Package / Case: DFN-2020-6
Pd - Power Dissipation: 1.4 W
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 10.5 nC, 10.7 nC
Rds On - Drain-Source Resistance: 29 mOhms, 61 mOhms
Rise Time: 10.5 ns, 11.5 ns
Series: DMC1229
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: N-Channel, P-Channel
Typical Turn-Off Delay Time: 16.6 ns, 27.8 ns
Typical Turn-On Delay Time: 5 ns, 5.7 ns
Vds - Drain-Source Breakdown Voltage: 12 V
Vgs - Gate-Source Voltage: -8 V, +8 V
Vgs th - Gate-Source Threshold Voltage: 1 V
Вес, г 1

Техническая документация

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Дополнительная информация

Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов