ADP3120AJRZ-RL, IC: driver; high-/low-side,MOSFET gate driver; SO8; Ch: 2; 35V

Фото 1/4 ADP3120AJRZ-RL, IC: driver; high-/low-side,MOSFET gate driver; SO8; Ch: 2; 35V
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см. техническую документацию
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Номенклатурный номер: 8031358846
Артикул: ADP3120AJRZ-RL

Описание

Микросхемы
Power drivers for MOSFET and IGBT in low side, high side, and half-bridge circuits.

Технические параметры

Driven Configuration Half Bridge
Fall Time 11ns
Load Type MOSFET
Number of Drivers 2
Operating Temperature -20℃~+150℃@(Tj)
Peak Output Current(sink) -
Rise Time 20ns
Supply Voltage 4.6V~13.2V
Case SO8
Impulse rise time 20ns
Integrated circuit features integrated bootstrap functionality
Kind of integrated circuit high-/low-side, MOSFET gate driver
Kind of package reel, tape
Manufacturer ONSEMI
Mounting SMD
Number of channels 2
ProtectionOCP - Over Current Protection OPP - Over Power Protection OVP - Under Voltage Protection SCP - Short Circuit Protection OTP - Over Temperature Protection BOP - Brown-Out Protection overheating OTP, undervoltage UVP
Pulse fall time 11ns
Type of integrated circuit driver
Voltage class 35V
Driver Type High and Low Side
Operating Supply Voltage (Max) 13.2 V
Operating Supply Voltage (Min) 4.15 V
Operating Temp Range -20C to 85C
Operating Temperature Classification Commercial
Output Resistance 3.3 ohm
Package Type SOIC N
Packaging Tape and Reel
Peak Output Current 1500
Pin Count 8
Propagation Delay Time 70 ns
Rad Hardened No
Bridge Type Half Bridge
High and Low Sides Dependency Synchronous
Mounting Type Surface Mount
Number of Outputs 2
Polarity Non-Inverting
Topology High Side
Вес, г 0.14

Техническая документация

Datasheet
pdf, 1680 КБ
Datasheet ADP3120AJCPZ-RL
pdf, 120 КБ
Datasheet ADP3120AJRZ-RL
pdf, 83 КБ

Дополнительная информация

Калькуляторы группы «Драйверы MOSFET и IGBT»
Типы корпусов импортных микросхем