ADP3120AJRZ-RL, IC: driver; high-/low-side,MOSFET gate driver; SO8; Ch: 2; 35V
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см. техническую документацию
см. техническую документацию
140 руб.
1 шт.
на сумму 140 руб.
Плати частями
от 0 руб. × 4 платежа
от 0 руб. × 4 платежа
Описание
Микросхемы
Power drivers for MOSFET and IGBT in low side, high side, and half-bridge circuits.
Технические параметры
Driven Configuration | Half Bridge |
Fall Time | 11ns |
Load Type | MOSFET |
Number of Drivers | 2 |
Operating Temperature | -20℃~+150℃@(Tj) |
Peak Output Current(sink) | - |
Rise Time | 20ns |
Supply Voltage | 4.6V~13.2V |
Case | SO8 |
Impulse rise time | 20ns |
Integrated circuit features | integrated bootstrap functionality |
Kind of integrated circuit | high-/low-side, MOSFET gate driver |
Kind of package | reel, tape |
Manufacturer | ONSEMI |
Mounting | SMD |
Number of channels | 2 |
ProtectionOCP - Over Current Protection OPP - Over Power Protection OVP - Under Voltage Protection SCP - Short Circuit Protection OTP - Over Temperature Protection BOP - Brown-Out Protection | overheating OTP, undervoltage UVP |
Pulse fall time | 11ns |
Type of integrated circuit | driver |
Voltage class | 35V |
Driver Type | High and Low Side |
Operating Supply Voltage (Max) | 13.2 V |
Operating Supply Voltage (Min) | 4.15 V |
Operating Temp Range | -20C to 85C |
Operating Temperature Classification | Commercial |
Output Resistance | 3.3 ohm |
Package Type | SOIC N |
Packaging | Tape and Reel |
Peak Output Current | 1500 |
Pin Count | 8 |
Propagation Delay Time | 70 ns |
Rad Hardened | No |
Bridge Type | Half Bridge |
High and Low Sides Dependency | Synchronous |
Mounting Type | Surface Mount |
Number of Outputs | 2 |
Polarity | Non-Inverting |
Topology | High Side |
Вес, г | 0.14 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Драйверы MOSFET и IGBT»
Типы корпусов импортных микросхем