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IRF7311TRPBF,2Nкан 20В 6.6А SO8

PartNumber: IRF7311TRPBF
Ном. номер: 8058695084
Производитель: Infineon Technologies
Фото 1/2 IRF7311TRPBF,2Nкан 20В 6.6А SO8
Фото 2/2 IRF7311TRPBF,2Nкан 20В 6.6А SO8
Есть в наличии более 70 шт. Отгрузка со склада в г.Москва 3 рабочих дня.
63 × = 63
от 75 шт. — 24 руб.
от 750 шт. — 19.94 руб.
Есть аналоги


The IRF7311TRPBF is a dual N-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.

• Generation V technology
• Ultra low ON-resistance
• Surface-mount device
• Fully avalanche rated

Транзисторы полевые импортные

Дополнительная информация

Datasheet IRF7311TRPBF
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов