STN3N45K3, Транзистор полевой 450В 3Вт
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436 шт. со склада г.Москва, срок 12 дней
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Описание
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Транзистор полевой 450В 3Вт
Технические параметры
| Корпус | SOT-223 | |
| кол-во в упаковке | 4000 | |
| Brand | STMicroelectronics | |
| Configuration | Single | |
| Factory Pack Quantity | 4000 | |
| Id - Continuous Drain Current | 600 mA | |
| Manufacturer | STMicroelectronics | |
| Maximum Operating Temperature | +150 C | |
| Mounting Style | SMD/SMT | |
| Number of Channels | 1 Channel | |
| Package / Case | SOT-223-3 | |
| Packaging | Reel | |
| Pd - Power Dissipation | 2 W | |
| Product Category | MOSFET | |
| Qg - Gate Charge | 6 nC | |
| Rds On - Drain-Source Resistance | 3.8 Ohms | |
| RoHS | Details | |
| Series | N-channel MDmesh | |
| Technology | Si | |
| Transistor Polarity | N-Channel | |
| Transistor Type | 1 N-Channel | |
| Type | SuperMesh3 Power MOSFET | |
| Vds - Drain-Source Breakdown Voltage | 450 V | |
| Vgs - Gate-Source Voltage | 3 V | |
| Vgs th - Gate-Source Threshold Voltage | 4.5 V | |
| Channel Mode | Enhancement | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 600 mA | |
| Maximum Drain Source Resistance | 3.8 Ω | |
| Maximum Drain Source Voltage | 450 V | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Maximum Power Dissipation | 2 W | |
| Minimum Gate Threshold Voltage | 3V | |
| Mounting Type | Surface Mount | |
| Number of Elements per Chip | 1 | |
| Package Type | SOT-223 | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 6 nC @ 10 V | |
| Width | 3.7mm | |
| Brand: | STMicroelectronics | |
| Channel Mode: | Enhancement | |
| Configuration: | Single | |
| Factory Pack Quantity: Factory Pack Quantity: | 4000 | |
| Fall Time: | 22 ns | |
| Id - Continuous Drain Current: | 600 mA | |
| Manufacturer: | STMicroelectronics | |
| Maximum Operating Temperature: | +150 C | |
| Minimum Operating Temperature: | -55 C | |
| Mounting Style: | SMD/SMT | |
| Number of Channels: | 1 Channel | |
| Package / Case: | SOT-223-4 | |
| Pd - Power Dissipation: | 3 W | |
| Product Category: | MOSFET | |
| Product Type: | MOSFET | |
| Qg - Gate Charge: | 9.5 nC | |
| Rds On - Drain-Source Resistance: | 4 Ohms | |
| Rise Time: | 5.4 ns | |
| Series: | STN3N45K3 | |
| Subcategory: | MOSFETs | |
| Technology: | Si | |
| Tradename: | SuperMESH | |
| Transistor Polarity: | N-Channel | |
| Transistor Type: | 1 N-Channel Power MOSFET | |
| Type: | SuperMesh3 Power MOSFET | |
| Typical Turn-Off Delay Time: | 17 ns | |
| Typical Turn-On Delay Time: | 6.5 ns | |
| Vds - Drain-Source Breakdown Voltage: | 450 V | |
| Vgs - Gate-Source Voltage: | -30 V, +30 V | |
| Vgs th - Gate-Source Threshold Voltage: | 3 V | |
| Вес, г | 0.85 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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