STGE200NB60S

PartNumber: STGE200NB60S
Ном. номер: 8249011361
Производитель: ST Microelectronics
STGE200NB60S
Доступно на заказ более 3 шт. Отгрузка со склада в г.Москва 5 рабочих дней.
1 530 × = 1 530
от 2 шт. — 1 380 руб.
от 10 шт. — 1 108.14 руб.
Есть аналоги

Описание

The STGE200NB60S is a N-channel low drop PowerMESH™ IGBT using the latest high voltage technology based on a patented strip layout. STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBT with outstanding performances. The suffix S identifies a family optimized to achieve very low VCE(sat) (at maximum frequency of 1kHz).

• High input impedance (voltage driven)
• Low on-voltage drop (Vcesat)
• Off losses include tail current
• Low gate charge
• High current capability

Транзисторы / IGBT (БТИЗ) транзисторы / Силовые модули IGBT
Корпус: ISOTOP, инфо: IGBT 600B/200А/600Вт/1.2В

Дополнительная информация

Datasheet STGE200NB60S