Корпус	SOT-23(SuperSOT-3)
Brand	ON Semiconductor/Fairchild
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	3000
Fall Time	7 ns
Forward Transconductance - Min	3 S
Height	1.2 mm
Id - Continuous Drain Current	900 mA
Length	2.9 mm
Manufacturer	ON Semiconductor
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	SOT-23-3
Packaging	Reel
Part # Aliases	FDV305N_NL
Pd - Power Dissipation	350 mW
Product	MOSFET Small Signal
Product Category	MOSFET
Rds On - Drain-Source Resistance	164 mOhms
Rise Time	7 ns
RoHS	Details
Series	FDV305N
Technology	Si
Tradename	PowerTrench
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Type	MOSFET
Typical Turn-Off Delay Time	8 ns
Typical Turn-On Delay Time	4.5 ns
Unit Weight	0.001058 oz
Vds - Drain-Source Breakdown Voltage	20 V
Vgs - Gate-Source Voltage	12 V
Width	1.3 mm
Automotive	No
Channel Type	N
ECCN (US)	EAR99
EU RoHS	Compliant
Lead Shape	Gull-wing
Maximum Continuous Drain Current (A)	0.9
Maximum Diode Forward Voltage (V)	1.2
Maximum Drain Source Resistance (mOhm)	220@4.5V
Maximum Drain Source Voltage (V)	20
Maximum Gate Source Leakage Current (nA)	100
Maximum Gate Source Voltage (V)	±12
Maximum Gate Threshold Voltage (V)	1.5
Maximum IDSS (uA)	1
Maximum Operating Temperature (°C)	150
Maximum Positive Gate Source Voltage (V)	12
Maximum Power Dissipation (mW)	350
Maximum Pulsed Drain Current @ TC=25°C (A)	2
Minimum Gate Threshold Voltage (V)	0.6
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	1
Operating Junction Temperature (°C)	-55 to 150
Part Status	Active
PCB changed	3
Pin Count	3
PPAP	No
Process Technology	PowerTrench
Standard Package Name	SOT
Supplier Package	SOT-23
Typical Diode Forward Voltage (V)	0.75
Typical Fall Time (ns)	1.4
Typical Gate Charge @ 10V (nC)	1.1
Typical Gate Charge @ Vgs (nC)	1.1@4.5V
Typical Gate Plateau Voltage (V)	1.9
Typical Gate Threshold Voltage (V)	1
Typical Gate to Drain Charge (nC)	0.26
Typical Gate to Source Charge (nC)	0.26
Typical Input Capacitance @ Vds (pF)	109@10V
Typical Output Capacitance (pF)	30
Typical Reverse Recovery Charge (nC)	2.2
Typical Reverse Recovery Time (ns)	7.4
Typical Reverse Transfer Capacitance @ Vds (pF)	14@10V
Typical Rise Time (ns)	7
Typical Turn-Off Delay Time (ns)	8
Typical Turn-On Delay Time (ns)	4.5
Brand:	onsemi/Fairchild
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	3000
Fall Time:	7 ns
Forward Transconductance - Min:	3 S
Id - Continuous Drain Current:	900 mA
Manufacturer:	onsemi
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	SOT-23-3
Part # Aliases:	FDV305N_NL
Pd - Power Dissipation:	350 mW
Product Category:	MOSFET
Product Type:	MOSFET
Product:	MOSFET Small Signals
Qg - Gate Charge:	1.5 nC
Rds On - Drain-Source Resistance:	164 mOhms
Rise Time:	7 ns
Series:	FDV305N
Subcategory:	MOSFETs
Technology:	Si
Tradename:	PowerTrench
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Type:	MOSFET
Typical Turn-Off Delay Time:	8 ns
Typical Turn-On Delay Time:	4.5 ns
Vds - Drain-Source Breakdown Voltage:	20 V
Vgs - Gate-Source Voltage:	-12 V, +12 V
Vgs th - Gate-Source Threshold Voltage:	600 mV
Maximum Continuous Drain Current	900 mA
Maximum Drain Source Resistance	220 mΩ
Maximum Drain Source Voltage	20 V
Maximum Gate Source Voltage	-12 V, +12 V
Maximum Power Dissipation	350 mW
Minimum Gate Threshold Voltage	0.6V
Mounting Type	Surface Mount
Package Type	SOT-23
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	1.1 nC @ 4.5 V
Вес, г	0.02

FDV305N, Транзистор полевой N-канальный 20В 0,95А 0.04 Ом, 0.35Вт

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