BCW66GLT1G, Биполярный транзистор, NPN, 45 В, 0.8 А, 0.225 Вт
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Описание
Транзисторы / Биполярные транзисторы / Одиночные биполярные транзисторы
Биполярный транзистор, NPN, 45 В, 0.8 А, 0.225 Вт
Технические параметры
| Корпус | sot-23 | |
| Brand | ON Semiconductor | |
| Collector- Base Voltage VCBO | 75 V | |
| Collector- Emitter Voltage VCEO Max | 45 V | |
| Collector-Emitter Saturation Voltage | 0.7 V | |
| Configuration | Single | |
| Continuous Collector Current | 800 mA | |
| Emitter- Base Voltage VEBO | 5 V | |
| Factory Pack Quantity | 3000 | |
| Gain Bandwidth Product FT | 100 MHz | |
| Manufacturer | ON Semiconductor | |
| Maximum DC Collector Current | 0.8 A | |
| Maximum Operating Temperature | +150 C | |
| Minimum Operating Temperature | -55 C | |
| Mounting Style | SMD/SMT | |
| Package / Case | SOT-23-3 | |
| Packaging | Cut Tape or Reel | |
| Pd - Power Dissipation | 225 mW | |
| Product Category | Bipolar Transistors-BJT | |
| Product Type | BJTs-Bipolar Transistors | |
| Series | BCW66 | |
| Subcategory | Transistors | |
| Transistor Polarity | NPN | |
| Brand: | onsemi | |
| Collector- Base Voltage VCBO: | 75 V | |
| Collector- Emitter Voltage VCEO Max: | 45 V | |
| Collector-Emitter Saturation Voltage: | 700 mV | |
| Configuration: | Single | |
| Continuous Collector Current: | 800 mA | |
| Emitter- Base Voltage VEBO: | 5 V | |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 | |
| Gain Bandwidth Product fT: | 100 MHz | |
| Manufacturer: | onsemi | |
| Maximum DC Collector Current: | 800 mA | |
| Maximum Operating Temperature: | +150 C | |
| Minimum Operating Temperature: | -55 C | |
| Mounting Style: | SMD/SMT | |
| Package / Case: | SOT-23-3 | |
| Pd - Power Dissipation: | 225 mW | |
| Product Category: | Bipolar Transistors-BJT | |
| Product Type: | BJTs-Bipolar Transistors | |
| Series: | BCW66 | |
| Subcategory: | Transistors | |
| Technology: | Si | |
| Transistor Polarity: | NPN | |
| Automotive | No | |
| ECCN (US) | EAR99 | |
| Lead Shape | Gull-wing | |
| Material | Si | |
| Maximum Base Emitter Saturation Voltage (V) | 2@50mA@500mA | |
| Maximum Collector Base Voltage (V) | 75 | |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.3@10mA@100mA|0.7@50mA@500mA | |
| Maximum Collector-Emitter Voltage (V) | 45 | |
| Maximum DC Collector Current (A) | 0.8 | |
| Maximum Emitter Base Voltage (V) | 5 | |
| Maximum Operating Temperature (°C) | 150 | |
| Maximum Power Dissipation (mW) | 300 | |
| Maximum Transition Frequency (MHz) | 100(Min) | |
| Minimum DC Current Gain | 50@100uA@10V|110@10mA@1V|160@100mA@1V|60@500mA@2V | |
| Minimum Operating Temperature (°C) | -55 | |
| Mounting | Surface Mount | |
| Number of Elements per Chip | 1 | |
| Part Status | Active | |
| PCB changed | 3 | |
| Pin Count | 3 | |
| PPAP | No | |
| Standard Package Name | SOT | |
| Supplier Package | SOT-23 | |
| Type | NPN | |
| Maximum Collector Base Voltage | 75 V dc | |
| Maximum Collector Emitter Voltage | 45 V | |
| Maximum Emitter Base Voltage | 5 V dc | |
| Maximum Operating Frequency | 100 MHz | |
| Maximum Power Dissipation | 300 mW | |
| Mounting Type | Surface Mount | |
| Package Type | SOT-23 | |
| Transistor Configuration | Single | |
| Transistor Type | NPN | |
| Вес, г | 0.05 |
Техническая документация
Datasheet
pdf, 143 КБ
Datasheet
pdf, 193 КБ
Datasheet BCW66GLT1G
pdf, 83 КБ
Datasheet BCW66GLT1G
pdf, 79 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные (BJTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
