Корпус	to-220
Brand	STMicroelectronics
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	1000
Fall Time	17 ns
Forward Transconductance - Min	9.6 S
Height	9.15 mm
Id - Continuous Drain Current	9 A
Length	10.4 mm
Manufacturer	STMicroelectronics
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	Through Hole
Number of Channels	1 Channel
Package / Case	TO-220-3
Packaging	Tube
Pd - Power Dissipation	160 W
Product Category	MOSFET
Qg - Gate Charge	72 nC
Rds On - Drain-Source Resistance	900 mOhms
Rise Time	20 ns
RoHS	Details
Series	N-channel MDmesh
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Type	MOSFET
Typical Turn-Off Delay Time	65 ns
Typical Turn-On Delay Time	30 ns
Vds - Drain-Source Breakdown Voltage	800 V
Vgs - Gate-Source Voltage	30 V
Width	4.6 mm
Channel Type	N
Maximum Continuous Drain Current	9 A
Maximum Drain Source Resistance	900 mΩ
Maximum Drain Source Voltage	800 V
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Gate Threshold Voltage	4.5V
Maximum Power Dissipation	160 W
Minimum Gate Threshold Voltage	3V
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	TO-220
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	72 nC @ 10 V
Automotive	No
ECCN (US)	EAR99
Lead Shape	Through Hole
Maximum Continuous Drain Current (A)	9
Maximum Drain Source Resistance (MOhm)	900@10V
Maximum Drain Source Voltage (V)	800
Maximum Gate Source Voltage (V)	±30
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	160000
Minimum Operating Temperature (°C)	-55
Mounting	Through Hole
Part Status	Active
PCB changed	3
PPAP	No
Process Technology	SuperMESH
Standard Package Name	TO
Supplier Package	TO-220AB
Supplier Temperature Grade	Industrial
Tab	Tab
Typical Fall Time (ns)	17
Typical Gate Charge @ 10V (nC)	72
Typical Gate Charge @ Vgs (nC)	72@10V
Typical Input Capacitance @ Vds (pF)	2180@25V
Typical Rise Time (ns)	20
Typical Turn-Off Delay Time (ns)	65
Typical Turn-On Delay Time (ns)	30
Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1000
Fall Time:	17 ns
Forward Transconductance - Min:	9.6 S
Id - Continuous Drain Current:	9 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package/Case:	TO-220-3
Packaging:	Tube
Pd - Power Dissipation:	160 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	72 nC
Rds On - Drain-Source Resistance:	900 mOhms
Rise Time:	20 ns
Series:	STP10NK80Z
Subcategory:	MOSFETs
Technology:	Si
Tradename:	SuperMESH
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Type:	MOSFET
Typical Turn-Off Delay Time:	65 ns
Typical Turn-On Delay Time:	30 ns
Vds - Drain-Source Breakdown Voltage:	800 V
Vgs - Gate-Source Voltage:	-30 V, +30 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Вес, г	3.5

STP10NK80Z, Транзистор полевой N-канальный 800В 9А 160Вт

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