IRG4PC50KPBF,IGBT 600В 52А 8-25кГц TO247AC

PartNumber: IRG4PC50KPBF
Ном. номер: 8393491089
Производитель: Infineon Technologies
Фото 1/2 IRG4PC50KPBF,IGBT 600В 52А 8-25кГц TO247AC
Фото 2/2 IRG4PC50KPBF,IGBT 600В 52А 8-25кГц TO247AC
Есть в наличии более 10 шт. Отгрузка со склада в г.Москва 3 рабочих дня.
350 × = 350
от 5 шт. — 200 руб.
от 50 шт. — 158.05 руб.
Есть аналоги

Описание

Single IGBT over 21A, International Rectifier
Optimised IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. Utilising FRED diodes optimised to provide the best performance with IGBT's

IGBT (Insulated-Gate Bipolar Transistor), International Rectifier
International Rectifier offers an extensive IGBT portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT die designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) die can be employed to eliminate bond wires allowing dual sided cooling for improved thermal performance, reliability and efficiency.

Single IGBT, International Rectifier

Offering switching speeds up to 150kHz, IR's discrete IGBTs are available for hard- and soft-switching applications. This comprehensive range offers reduced power dissipation and improved power density and includes DPAK, D2PAK, TO-220, TO-247, TO-262 and Super TO-247 package options.

Co-Pack IGBT, International Rectifier

IR's range of Co-Pack IGBTs combines the high performance IGBT with ultrafast anti-parallel recovery diodes in a single compact surface mount or though hole package. Co-Pack IGBTs are available for hard- and soft-switching applications with switching speeds as high as 150kHz.

IGBT транзисторы

Дополнительная информация

IRG4PC50KPBF Data Sheet IRG4PC50KPBF
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов