Корпус	SOT-223
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	250 mA
Maximum Drain Source Resistance	16 Ω
Maximum Drain Source Voltage	800 V
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Gate Threshold Voltage	4.5V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	2.5 W
Minimum Gate Threshold Voltage	3V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOT-223
Pin Count	3
Series	MDmesh, SuperMESH
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	7.7 nC @ 10 V
Width	3.5mm
Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	4000
Fall Time:	55 ns
Forward Transconductance - Min:	0.8 S
Id - Continuous Drain Current:	250 mA
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	SOT-223-4
Pd - Power Dissipation:	2.5 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	7.7 nC
Rds On - Drain-Source Resistance:	16 Ohms
Rise Time:	30 ns
Series:	STN1NK80Z
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel MOSFET
Type:	Power MOSFET
Typical Turn-Off Delay Time:	22 ns
Typical Turn-On Delay Time:	8 ns
Vds - Drain-Source Breakdown Voltage:	800 V
Vgs - Gate-Source Voltage:	-30 V, +30 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Automotive	No
Configuration	Single Dual Drain
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
Lead Shape	Gull-wing
Maximum Continuous Drain Current (A)	0.25
Maximum Diode Forward Voltage (V)	1.6
Maximum Drain Source Resistance (mOhm)	16000@10V
Maximum Drain Source Voltage (V)	800
Maximum Gate Source Voltage (V)	±30
Maximum Gate Threshold Voltage (V)	4.5
Maximum Operating Temperature (°C)	150
Maximum Positive Gate Source Voltage (V)	30
Maximum Power Dissipation (mW)	2500
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Operating Junction Temperature (°C)	-55 to 150
Packaging	Tape and Reel
Part Status	Active
PCB changed	3
PPAP	No
Process Technology	SuperMESH
Product Category	Power MOSFET
Standard Package Name	SOT
Supplier Package	SOT-223
Tab	Tab
Typical Fall Time (ns)	55
Typical Gate Charge @ 10V (nC)	7.7
Typical Gate Charge @ Vgs (nC)	7.7@10V
Typical Input Capacitance @ Vds (pF)	160@25V
Typical Rise Time (ns)	30
Typical Turn-Off Delay Time (ns)	22
Typical Turn-On Delay Time (ns)	8
Brand	STMicroelectronics
Factory Pack Quantity	4000
Fall Time	55 ns
Forward Transconductance - Min	0.8 S
Height	1.8 mm
Id - Continuous Drain Current	250 mA
Length	6.5 mm
Manufacturer	STMicroelectronics
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	SOT-223-3
Pd - Power Dissipation	2.5 W
Qg - Gate Charge	7.7 nC
Rds On - Drain-Source Resistance	16 Ohms
Rise Time	30 ns
RoHS	Details
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Type	Power Mosfet
Typical Turn-Off Delay Time	22 ns
Typical Turn-On Delay Time	8 ns
Vds - Drain-Source Breakdown Voltage	800 V
Vgs - Gate-Source Voltage	30 V
Вес, г	0.85

STN1NK80Z, Транзистор полевой N-канальный 800В 2.5Вт

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