BSP318SH6327XTSA1, Транзистор полевой N-канальный 60В 2.6A
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Описание
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Транзистор полевой N-канальный 60В 2.6A
Технические параметры
| Корпус | SOT-223 | |
| Base Product Number | BSP318 -> | |
| Current - Continuous Drain (Id) @ 25В°C | 2.6A (Tj) | |
| Drain to Source Voltage (Vdss) | 60V | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| ECCN | EAR99 | |
| FET Type | N-Channel | |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V | |
| HTSUS | 8541.29.0095 | |
| Input Capacitance (Ciss) (Max) @ Vds | 380pF @ 25V | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Mounting Type | Surface Mount | |
| Operating Temperature | -55В°C ~ 150В°C (TJ) | |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® | |
| Package / Case | TO-261-4, TO-261AA | |
| Power Dissipation (Max) | 1.8W (Ta) | |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2.6A, 10V | |
| REACH Status | REACH Unaffected | |
| RoHS Status | ROHS3 Compliant | |
| Series | SIPMOSВ® -> | |
| Supplier Device Package | PG-SOT223-4 | |
| Technology | MOSFET (Metal Oxide) | |
| Vgs (Max) | В±20V | |
| Vgs(th) (Max) @ Id | 2V @ 20ВµA | |
| Brand | Infineon Technologies | |
| Channel Mode | Enhancement | |
| Configuration | 1 N-Channel | |
| Factory Pack Quantity | 1000 | |
| Fall Time | 15 ns | |
| Forward Transconductance - Min | 2.4 S | |
| Height | 1.6 mm | |
| Id - Continuous Drain Current | 2.6 A | |
| Length | 6.5 mm | |
| Manufacturer | Infineon | |
| Maximum Operating Temperature | +150 C | |
| Minimum Operating Temperature | -55 C | |
| Mounting Style | SMD/SMT | |
| Number of Channels | 1 Channel | |
| Packaging | Reel | |
| Part # Aliases | BSP318S H6327 SP001058838 | |
| Pd - Power Dissipation | 1.8 W | |
| Product Category | MOSFET | |
| Qg - Gate Charge | 20 nC | |
| Rds On - Drain-Source Resistance | 70 mOhms | |
| Rise Time | 15 ns | |
| RoHS | Details | |
| Transistor Polarity | N-Channel | |
| Transistor Type | 1 N-Channel | |
| Typical Turn-Off Delay Time | 20 ns | |
| Typical Turn-On Delay Time | 12 ns | |
| Vds - Drain-Source Breakdown Voltage | 60 V | |
| Vgs - Gate-Source Voltage | 20 V | |
| Vgs th - Gate-Source Threshold Voltage | 1.2 V | |
| Width | 3.5 mm | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 2.6 A | |
| Maximum Drain Source Resistance | 150 mΩ | |
| Maximum Drain Source Voltage | 60 V | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 1.8 W | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Number of Elements per Chip | 1 | |
| Package Type | SOT-223 | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 14 nC @ 10 V | |
| Вес, г | 0.85 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet BSP318SH6327XTSA1
pdf, 415 КБ
Datasheet BSP318SH6327XTSA1
pdf, 354 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
