PartNumber: IRF7301TRPBF
Ном. номер: 8592450020
Производитель: International Rectifier
Фото 1/2 IRF7301TRPBF
Фото 2/2 IRF7301TRPBF
Доступно на заказ более 100 шт. Отгрузка со склада в г.Москва 5 дней.
49 руб. × = 294 руб.
Минимальное количество для заказа 6 шт.
от 50 шт. — 23 руб.
от 200 шт. — 17.98 руб.
Есть аналоги


The IRF7301TRPBF is a dual N-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.

• Generation V technology
• Ultra low ON-resistance
• Surface-mount device
• Dynamic dV/dt rating
• Fast switching performance

Транзисторы / Полевые транзисторы / Сборки MOSFET транзисторов
Корпус: SO8, инфо: MOSFET 2N-CH 20V 5.2A 8-SOIC

Дополнительная информация

Datasheet IRF7301TRPBF