IRG4BC40WPBF

PartNumber: IRG4BC40WPBF
Ном. номер: 8600951735
Производитель: International Rectifier
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Доступно на заказ более 10 шт. Отгрузка со склада в г.Москва 5 дней.
260 руб. × = 260 руб.
от 10 шт. — 130 руб.
Есть аналоги

Описание

The IRG4BC40WPBF is an Insulated Gate Bipolar Transistor designed expressly for switch-mode power supply and PFC (power factor correction) applications. The latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability. It features lower switching losses allow more cost-effective operation than power MOSFETs up to 150kHz (hard switched mode). Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >300kHz).

• Industry-benchmark switching losses improve efficiency of all power supply topologies
• 50% Reduction of Eoff parameter
• Low IGBT conduction losses
• Particular benefit to single-ended converters and boost PFC topologies 150W and higher

Транзисторы / IGBT (БТИЗ) транзисторы / Одиночные IGBT транзисторы
Корпус: TO-220AB, инфо: IGBT 600V 40A 160W TO220AB

Технические параметры

Channel Type
N
конфигурация
Single
размеры
10.54 x 4.69 x 8.77mm
высота
8.77mm
длина
10.54mm
Maximum Collector Emitter Voltage
600 V
Maximum Continuous Collector Current
40 A
Maximum Gate Emitter Voltage
±20V
максимальная рабочая температура
+150 °C
Minimum Operating Temperature
-55 °C
тип монтажа
Through Hole
тип упаковки
TO-220AB
Pin Count
3
ширина
4.69mm

Дополнительная информация

Datasheet IRG4BC40WPBF
IRG4BC40WPBF Data Sheet IRG4BC40WPBF