IRF6215PBF, Pкан -150В -13А TO220AB

PartNumber: IRF6215PBF
Ном. номер: 8748221174
Производитель: Infineon Technologies
Фото 1/3 IRF6215PBF, Pкан -150В -13А TO220AB
Фото 2/3 IRF6215PBF, Pкан -150В -13А TO220ABФото 3/3 IRF6215PBF, Pкан -150В -13А TO220AB
Есть в наличии более 50 шт. Отгрузка со склада в г.Москва 3 дня.
92 руб. × = 92 руб.
от 45 шт. — 40 руб.
Есть аналоги

Описание

P-Channel Power MOSFET over 8A, International Rectifier
International Rectifier's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, International Rectifier
International Rectifier's comprehensive portfolio of rugged single- and dual- N-channel and P-channel devices offers fast switching speeds and addresses a wide variety of power requirements in applications ranging from AC-DC and DC-DC power supplies to audio and consumer electronics and from motor control to lighting and home appliances.

Транзисторы полевые импортные

Технические параметры

разрешение
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
конфигурация
Single
размеры
10.54 x 4.69 x 8.77mm
высота
8.77mm
длина
10.54mm
Maximum Continuous Drain Current
13 A
Maximum Drain Source Resistance
0.29 Ω
Maximum Drain Source Voltage
150 V
Maximum Gate Source Voltage
±20 V
максимальная рабочая температура
+175 °C
Максимальная рассеиваемая мощность
110 W
Minimum Operating Temperature
-55 °C
тип монтажа
Through Hole
Number of Elements per Chip
1
тип упаковки
TO-220AB
Pin Count
3
Typical Gate Charge @ Vgs
66 nC@ 10 V
Typical Input Capacitance @ Vds
860 pF@ 25 V
Typical Turn-Off Delay Time
53 ns
Typical Turn-On Delay Time
14 ns
ширина
4.69mm
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V

Дополнительная информация

Datasheet IRF6215PBF
IRF6215PBF Data Sheet IRF6215PBF