STP19NF20, Транзистор полевой N-канальный 200В 15А 0.15 Ом
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127 шт. со склада г.Москва, срок 12 дней
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Описание
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Транзистор полевой N-канальный 200В 15А 0.15 Ом
Технические параметры
Корпус | TO-220AB | |
Brand | STMicroelectronics | |
Channel Mode | Enhancement | |
Configuration | Single | |
Factory Pack Quantity | 1000 | |
Fall Time | 11 ns | |
Height | 9.15 mm | |
Id - Continuous Drain Current | 15 A | |
Length | 10.4 mm | |
Manufacturer | STMicroelectronics | |
Maximum Operating Temperature | +150 C | |
Minimum Operating Temperature | -55 C | |
Mounting Style | Through Hole | |
Number of Channels | 1 Channel | |
Package / Case | TO-220-3 | |
Packaging | Tube | |
Pd - Power Dissipation | 90 W | |
Product Category | MOSFET | |
Rds On - Drain-Source Resistance | 160 mOhms | |
Rise Time | 22 ns | |
RoHS | Details | |
Series | N-channel STripFET | |
Technology | Si | |
Transistor Polarity | N-Channel | |
Transistor Type | 1 N-Channel | |
Typical Turn-Off Delay Time | 19 ns | |
Typical Turn-On Delay Time | 11.5 ns | |
Vds - Drain-Source Breakdown Voltage | 200 V | |
Vgs - Gate-Source Voltage | 20 V | |
Width | 4.6 mm | |
Brand: | STMicroelectronics | |
Channel Mode: | Enhancement | |
Configuration: | Single | |
Factory Pack Quantity: Factory Pack Quantity: | 1000 | |
Fall Time: | 11 ns | |
Id - Continuous Drain Current: | 15 A | |
Manufacturer: | STMicroelectronics | |
Maximum Operating Temperature: | +150 C | |
Minimum Operating Temperature: | -55 C | |
Mounting Style: | Through Hole | |
Number of Channels: | 1 Channel | |
Package / Case: | TO-220-3 | |
Packaging: | Tube | |
Pd - Power Dissipation: | 90 W | |
Product Category: | MOSFET | |
Product Type: | MOSFET | |
Qg - Gate Charge: | 24 nC | |
Rds On - Drain-Source Resistance: | 160 mOhms | |
Rise Time: | 22 ns | |
Series: | STP19NF20 | |
Subcategory: | MOSFETs | |
Technology: | Si | |
Tradename: | MESH OVERLAY | |
Transistor Polarity: | N-Channel | |
Transistor Type: | 1 N-Channel | |
Typical Turn-Off Delay Time: | 19 ns | |
Typical Turn-On Delay Time: | 11.5 ns | |
Vds - Drain-Source Breakdown Voltage: | 200 V | |
Vgs - Gate-Source Voltage: | -20 V, +20 V | |
Vgs th - Gate-Source Threshold Voltage: | 2 V | |
Automotive | No | |
Channel Type | N | |
ECCN (US) | EAR99 | |
Lead Shape | Through Hole | |
Maximum Continuous Drain Current (A) | 15 | |
Maximum Diode Forward Voltage (V) | 1.6 | |
Maximum Drain Source Resistance (mOhm) | 160@10V | |
Maximum Drain Source Voltage (V) | 200 | |
Maximum Gate Source Voltage (V) | ±20 | |
Maximum Gate Threshold Voltage (V) | 4 | |
Maximum Operating Temperature (°C) | 150 | |
Maximum Positive Gate Source Voltage (V) | 20 | |
Maximum Power Dissipation (mW) | 90000 | |
Minimum Operating Temperature (°C) | -55 | |
Mounting | Through Hole | |
Number of Elements per Chip | 1 | |
Operating Junction Temperature (°C) | -55 to 150 | |
Part Status | Active | |
PCB changed | 3 | |
Pin Count | 3 | |
PPAP | No | |
Process Technology | Mesh Overlay | |
Standard Package Name | TO-220 | |
Supplier Package | TO-220AB | |
Supplier Temperature Grade | Industrial | |
Tab | Tab | |
Typical Fall Time (ns) | 11 | |
Typical Gate Charge @ 10V (nC) | 24 | |
Typical Gate Charge @ Vgs (nC) | 24@10V | |
Typical Input Capacitance @ Vds (pF) | 800@25V | |
Typical Rise Time (ns) | 22 | |
Typical Turn-Off Delay Time (ns) | 19 | |
Typical Turn-On Delay Time (ns) | 11.5 | |
Вес, г | 3.5 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
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