STP40NF10L, Транзистор N-МОП, полевой, 100В, 25А, 150Вт, TO220-3
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Описание
Описание Транзистор N-МОП, полевой, 100В, 25А, 150Вт, TO220-3
Технические параметры
Base Product Number | STP40 -> |
Current - Continuous Drain (Id) @ 25В°C | 40A (Tc) |
Drain to Source Voltage (Vdss) | 100V |
Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
ECCN | EAR99 |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 64nC @ 5V |
HTSUS | 8541.29.0095 |
Input Capacitance (Ciss) (Max) @ Vds | 2300pF @ 25V |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Mounting Type | Through Hole |
Operating Temperature | 175В°C (TJ) |
Other Related Documents | http://www.st.com/web/catalog/sense_power/FM100/CL |
Package | Tube |
Package / Case | TO-220-3 |
Power Dissipation (Max) | 150W (Tc) |
Rds On (Max) @ Id, Vgs | 33mOhm @ 20A, 10V |
REACH Status | REACH Unaffected |
RoHS Status | ROHS3 Compliant |
Series | STripFETв„ў -> |
Supplier Device Package | TO-220AB |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | В±17V |
Vgs(th) (Max) @ Id | 2.5V @ 250ВµA |
Channel Mode | Enhancement |
Channel Type | N |
Maximum Continuous Drain Current | 40 A |
Maximum Drain Source Resistance | 33 mΩ |
Maximum Drain Source Voltage | 100 V |
Maximum Gate Source Voltage | -17 V, +17 V |
Maximum Gate Threshold Voltage | 2.5V |
Maximum Operating Temperature | +175 °C |
Maximum Power Dissipation | 150 W |
Minimum Gate Threshold Voltage | 1V |
Minimum Operating Temperature | -65 °C |
Number of Elements per Chip | 1 |
Package Type | TO-220 |
Pin Count | 3 |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 46 nC @ 5 V |
Width | 4.6mm |
Brand | STMicroelectronics |
Configuration | Single |
Factory Pack Quantity | 1000 |
Fall Time | 24 ns |
Forward Transconductance - Min | 25 S |
Height | 9.15 mm |
Id - Continuous Drain Current | 40 A |
Length | 10.4 mm |
Manufacturer | STMicroelectronics |
Mounting Style | Through Hole |
Number of Channels | 1 Channel |
Packaging | Tube |
Pd - Power Dissipation | 150 W |
Product Category | MOSFET |
Rds On - Drain-Source Resistance | 33 mOhms |
Rise Time | 82 ns |
RoHS | Details |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Type | MOSFET |
Typical Turn-Off Delay Time | 64 ns |
Typical Turn-On Delay Time | 25 ns |
Vds - Drain-Source Breakdown Voltage | 100 V |
Vgs - Gate-Source Voltage | 17 V |
Вес, г | 1.87 |
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