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The IRF7313TRPBF is a dual N-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
• Generation V technology
• Ultra low ON-resistance
• Surface-mount device
• Fully avalanche rated
Транзисторы / Полевые транзисторы / Сборки MOSFET транзисторов
Корпус: SO8, инфо: MOSFET N-канал 30В/ 6.5А/2Вт/0.029 Ом Упр.лог.уровнем Сдвоенные