IRG4BC20UDPBF

PartNumber: IRG4BC20UDPBF
Ном. номер: 8979898319
Производитель: International Rectifier
Фото 1/2 IRG4BC20UDPBF
Фото 2/2 IRG4BC20UDPBF
Доступно на заказ более 20 шт. Отгрузка со склада в г.Москва 5 рабочих дней.
180 руб. × = 360 руб.
Минимальное количество для заказа 2 шт.
от 10 шт. — 94 руб.
от 50 шт. — 70.60 руб.
Есть аналоги

Описание

Co-Pack IGBT up to 20A, International Rectifier
Isolated Gate Bipolar Transistors (IGBT) from International Semiconductor provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.

IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations

IGBT (Insulated-Gate Bipolar Transistor), International Rectifier
International Rectifier offers an extensive IGBT portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT die designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) die can be employed to eliminate bond wires allowing dual sided cooling for improved thermal performance, reliability and efficiency.

Single IGBT, International Rectifier

Offering switching speeds up to 150kHz, IR's discrete IGBTs are available for hard- and soft-switching applications. This comprehensive range offers reduced power dissipation and improved power density and includes DPAK, D2PAK, TO-220, TO-247, TO-262 and Super TO-247 package options.

Co-Pack IGBT, International Rectifier

IR's range of Co-Pack IGBTs combines the high performance IGBT with ultrafast anti-parallel recovery diodes in a single compact surface mount or though hole package. Co-Pack IGBTs are available for hard- and soft-switching applications with switching speeds as high as 150kHz.

Транзисторы / IGBT (БТИЗ) транзисторы / Одиночные IGBT транзисторы
Корпус: TO-220AB, инфо: IGBT 600В/6.5A/60Вт/Uкэ(нас)=2.1В 10-75кГц Диод

Технические параметры

Channel Type
N
конфигурация
Single
размеры
10.54 x 4.69 x 8.77mm
высота
8.77mm
длина
10.54mm
Maximum Collector Emitter Voltage
600 V
Maximum Continuous Collector Current
13 A
Maximum Gate Emitter Voltage
±20V
максимальная рабочая температура
+150 °C
Minimum Operating Temperature
-55 °C
тип монтажа
Through Hole
тип упаковки
TO-220AB
Pin Count
3
ширина
4.69mm

Техническая документация

IRG4BC20UDPBF Datasheet
pdf, 371 КБ

Дополнительная информация

Datasheet IRG4BC20UDPBF
IRG4BC20UDPBF Data Sheet IRG4BC20UDPBF
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов