The IRG4BC20UDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It is optimized for high operating frequencies 8 to 40kHz in hard switching, >200kHz in resonant mode. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3. The IGBT co-packaged with HEXFRED® ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations. The HEXFRED® diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing.
• Optimized for specific application conditions
• Designed to be a drop-in replacement for equivalent industry-standard generation 3 IR IGBTs
Транзисторы / IGBT (БТИЗ) транзисторы / Одиночные IGBT транзисторы
Корпус: TO-220AB, инфо: IGBT 600В/6.5A/60Вт/Uкэ(нас)=2.1В 10-75кГц Диод