Корпус	TO-247
Base Product Number	STW10 ->
Current - Continuous Drain (Id) @ 25В°C	10A (Tc)
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On, Min Rds On)	10V
ECCN	EAR99
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	70nC @ 10V
HTSUS	8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds	1370pF @ 25V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 150В°C (TJ)
Other Related Documents	http://www.st.com/web/catalog/sense_power/FM100/CL
Package	Tube
Package / Case	TO-247-3
Power Dissipation (Max)	156W (Tc)
Rds On (Max) @ Id, Vgs	750mOhm @ 4.5A, 10V
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Series	SuperMESHв„ў ->
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±30V
Vgs(th) (Max) @ Id	4.5V @ 250ВµA
Channel Type	N Channel
Drain Source On State Resistance	0.65Ом
Power Dissipation	156Вт
Количество Выводов	3вывод(-ов)
Максимальная Рабочая Температура	150 C
Монтаж транзистора	Through Hole
Напряжение Измерения Rds(on)	10В
Напряжение Истока-стока Vds	600В
Непрерывный Ток Стока	10А
Полярность Транзистора	N Канал
Пороговое Напряжение Vgs	3.75В
Рассеиваемая Мощность	156Вт
Сопротивление во Включенном Состоянии Rds(on)	0.65Ом
Стиль Корпуса Транзистора	TO-247
Channel Mode	Enhancement
Maximum Continuous Drain Current	10 A
Maximum Drain Source Resistance	750 mΩ
Maximum Drain Source Voltage	600 V
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Gate Threshold Voltage	4.5V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	156 W
Minimum Gate Threshold Voltage	3V
Minimum Operating Temperature	-55 °C
Number of Elements per Chip	1
Package Type	TO-247
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	50 nC @ 10 V
Width	5.15mm
Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	600
Fall Time:	30 ns
Forward Transconductance - Min:	7.8 S
Id - Continuous Drain Current:	10 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package / Case:	TO-247-3
Packaging:	Tube
Pd - Power Dissipation:	156 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	50 nC
Rds On - Drain-Source Resistance:	750 mOhms
Rise Time:	20 ns
Series:	STW10NK60Z
Subcategory:	MOSFETs
Technology:	Si
Tradename:	SuperMESH
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Type:	MOSFET
Typical Turn-Off Delay Time:	55 ns
Typical Turn-On Delay Time:	20 ns
Vds - Drain-Source Breakdown Voltage:	600 V
Vgs - Gate-Source Voltage:	-30 V, +30 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Вес, г	8.5

STW10NK60Z, Транзистор полевой N-канальный 600В 10А 156Вт

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