IXFN110N60P3 MOSFET транзистор IXYS

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6 140 руб.

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Номенклатурный номер: 8015647101

Артикул: IXFN110N60P3

Транзисторы импортные

Примечание: !

Описание Транзистор N-МОП, полевой, 600В 90A 1500Вт 0,056Ом SOT227B Характеристики

California Prop 65	Warning Information
Current - Continuous Drain (Id) @ 25В°C	90A (Tc)
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On, Min Rds On)	10V
ECCN	EAR99
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	245nC @ 10V
HTSUS	8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds	18000pF @ 25V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Chassis Mount
Operating Temperature	-55В°C ~ 150В°C (TJ)
Package	Tube
Package / Case	SOT-227-4, miniBLOC
Power Dissipation (Max)	1500W (Tc)
Rds On (Max) @ Id, Vgs	56mOhm @ 55A, 10V
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Series	HiPerFETв„ў, Polar3в„ў ->
Supplier Device Package	SOT-227B
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±30V
Vgs(th) (Max) @ Id	5V @ 8mA
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	90 A
Maximum Drain Source Resistance	56 mΩ
Maximum Drain Source Voltage	600 V
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Gate Threshold Voltage	5V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	1.5 kW
Minimum Operating Temperature	-55 °C
Number of Elements per Chip	1
Package Type	SOT-227
Pin Count	4
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	245 nC @ 10 V
Width	25.07mm
Вес, г	50