ZVN4525ZTA, MOSFET N-Chnl 250V
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Power MOSFETsDiodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.
Технические параметры
Brand: | Diodes Incorporated |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 1000 |
Fall Time: | 3.5 ns |
Forward Transconductance - Min: | 0.3 S |
Id - Continuous Drain Current: | 240 mA |
Manufacturer: | Diodes Incorporated |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | SOT-89-3 |
Pd - Power Dissipation: | 1.2 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Product: | MOSFET Small Signal |
Qg - Gate Charge: | 2.6 nC |
Rds On - Drain-Source Resistance: | 8.5 Ohms |
Rise Time: | 1.7 ns |
Series: | ZVN4525 |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Type: | FET |
Typical Turn-Off Delay Time: | 11.4 ns |
Typical Turn-On Delay Time: | 1.25 ns |
Vds - Drain-Source Breakdown Voltage: | 250 V |
Vgs - Gate-Source Voltage: | -40 V, +40 V |
Vgs th - Gate-Source Threshold Voltage: | 800 mV |
Channel Mode | Enhancement |
Channel Type | N |
Maximum Continuous Drain Current | 240 mA |
Maximum Drain Source Resistance | 9.5 Ω |
Maximum Drain Source Voltage | 250 V |
Maximum Gate Source Voltage | -40 V, +40 V |
Maximum Gate Threshold Voltage | 1.8V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 1.2 W |
Minimum Operating Temperature | -55 °C |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | SOT-89 |
Pin Count | 3 |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 2.6 nC @ 10 V |
Width | 2.6mm |
Вес, г | 3 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов