IPS80R600P7AKMA1, 800V CoolMOS P7 Power Transistor
1500 шт. со склада г.Москва,
срок 3-4 недели
от 450 шт. — 59.60 руб.
от 900 шт. — 58 руб.
Мин. кол-во для заказа 150 шт.
Кратность заказа 75 шт.
|140 руб.||2-3 недели, 155 шт.||5 шт.||5 шт.|
от 25 шт. — 124 руб.
от 100 шт. — 95 руб.
Добавить в корзину 0 шт. на сумму 0 руб.
The 800V CoolMOS™ P7 N-channel power MOSFETs from Infineon are highly efficient MOSFETs with best-in-class RDS(on)/package. These MOSFETs set a new benchmark in efficiency and thermal performance. The 800V CoolMOS™ P7 product families have been developed for flyback based low power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. Designed to address typical challenges in the various applications by delivering best-in-class price/performance ratio with excellent ease of use, making them a perfect fit for target applications. These product family offers 0.1% to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature as compared to 800V CoolMOS™ C3 tested in flyback based applications. Such best in class performance comes from a combination of various optimized device parameters such as more than 50% reduction in switching losses (Eoss) and gate charge (Qg) and reduced input capacitance (Ciss) and output capacitance (C
• Best in class FOM (Figure Of Merit) RDS(on) * Eoss (switching losses)
• Best in class DPAK RDS(on) of 280mohm
• Enabling higher power density designs, BOM savings and lower assembly costs
• Best in class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V
• Easy to drive and to design-in
• Class 1C (HBM), class 2 (HBM), class C3 (CDM) integrated zener diode ESD protection
• Better production yield by reducing ESD related failures
• Best in class quality and reliability
• Fully optimized portfolio, easy to select right parts for fine tuning of designs
• Ease of use is an intrinsic feature designed into this product family
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