Мой регион: Россия

SI7658ADP-T1-GE3, Trans MOSFET N-CH 30V 36A 8-Pin PowerPAK SO EP T/R

Ном. номер: 8000996620
PartNumber: SI7658ADP-T1-GE3
Производитель: Vishay
Фото 1/2 SI7658ADP-T1-GE3, Trans MOSFET N-CH 30V 36A 8-Pin PowerPAK SO EP T/R
* Изображения служат только для ознакомления,
см. техническую документацию
Фото 2/2 SI7658ADP-T1-GE3, Trans MOSFET N-CH 30V 36A 8-Pin PowerPAK SO EP T/R
234 руб.
1712 шт.,
срок 4-6 недель
от 10 шт. — 221 руб.
от 25 шт. — 217 руб.
Добавить в корзину 1 шт. на сумму 234 руб.

Технические параметры

EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.95
Product Category
Power MOSFET
Process Technology
TrenchFET
Configuration
Single Quad Drain Triple Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
30
Maximum Gate Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
2.5
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
60
Maximum Gate Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain Source Resistance (mOhm)
2.2@10V
Typical Gate Charge @ Vgs (nC)
74@10V|34@4.5V
Typical Gate Charge @ 10V (nC)
74
Typical Gate to Drain Charge (nC)
10
Typical Gate to Source Charge (nC)
12
Typical Reverse Recovery Charge (nC)
25
Typical Input Capacitance @ Vds (pF)
4590@15V
Typical Reverse Transfer Capacitance @ Vds (pF)
320@15V
Minimum Gate Threshold Voltage (V)
1.2
Typical Output Capacitance (pF)
810
Maximum Power Dissipation (mW)
5400
Typical Fall Time (ns)
30
Typical Rise Time (ns)
18
Typical Turn-Off Delay Time (ns)
60
Typical Turn-On Delay Time (ns)
45
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Automotive
No
Pin Count
8
Supplier Package
PowerPAK SO
Military
No
Mounting
Surface Mount
Package Height
1.07(Max)
Package Length
4.9
Package Width
5.89
PCB changed
8
Lead Shape
No Lead
Maximum Continuous Drain Current on PCB @ TC=25°C (A)
36
Maximum Positive Gate Source Voltage (V)
20
Minimum Gate Resistance (Ohm)
0.2
Maximum Gate Resistance (Ohm)
1.6
Typical Gate Plateau Voltage (V)
2.5
Typical Diode Forward Voltage (V)
0.72
Maximum Diode Forward Voltage (V)
1.1
Typical Reverse Recovery Time (ns)
33
Maximum Pulsed Drain Current @ TC=25°C (A)
80
Maximum Power Dissipation on PCB @ TC=25°C (W)
5.4
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
65

Дополнительная информация

Datasheet SI7658ADP-T1-GE3

Выберите регион, чтобы увидеть способы получения товара.