SI7456DP-T1-GE3
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см. техническую документацию
см. техническую документацию
240 руб.
Кратность заказа 3000 шт.
от 6000 шт. —
230 руб.
Добавить в корзину 3000 шт.
на сумму 720 000 руб.
Описание
Trans MOSFET N-CH 100V 5.7A 8-Pin PowerPAK SO T/R
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | No Lead |
| Maximum Continuous Drain Current (A) | 5.7 |
| Maximum Drain Source Resistance (mOhm) | 25@10V |
| Maximum Drain Source Voltage (V) | 100 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum IDSS (uA) | 1 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 5200 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Packaging | Tape and Reel |
| Part Status | NRND |
| PCB changed | 8 |
| Pin Count | 8 |
| PPAP | No |
| Process Technology | TrenchFET |
| Product Category | Power MOSFET |
| Supplier Package | PowerPAK SO |
| Typical Fall Time (ns) | 26 |
| Typical Gate Charge @ 10V (nC) | 36 |
| Typical Gate Charge @ Vgs (nC) | 36@10V |
| Typical Rise Time (ns) | 10 |
| Typical Turn-Off Delay Time (ns) | 46 |
| Typical Turn-On Delay Time (ns) | 14 |
| Brand: | Vishay Semiconductors |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Id - Continuous Drain Current: | 9.3 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | PowerPAK-SO-8 |
| Part # Aliases: | SI7456DP-GE3 |
| Pd - Power Dissipation: | 5.2 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 44 nC |
| Rds On - Drain-Source Resistance: | 25 mOhms |
| Series: | SI7 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | TrenchFET |
| Transistor Polarity: | N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
