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SI5457DC-T1-GE3, Trans MOSFET P-CH 20V 6A 8-Pin SMD T/R

Ном. номер: 8001000753
PartNumber: SI5457DC-T1-GE3
Производитель: Vishay
75 руб.
65 руб.
1786 шт.,
срок 4-6 недель
от 10 шт. — 55.10 руб.
от 25 шт. — 53.20 руб.
Мин. кол-во для заказа 2 шт.
Добавить в корзину 2 шт. на сумму 130 руб.

Технические параметры

EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.95
Product Category
Power MOSFET
Process Technology
TrenchFET
Configuration
Single Hex Drain
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
20
Maximum Gate Source Voltage (V)
±12
Maximum Gate Threshold Voltage (V)
1.4
Maximum Continuous Drain Current (A)
6
Maximum Gate Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain Source Resistance (mOhm)
36@4.5V
Typical Gate Charge @ Vgs (nC)
25@10V|12.5@4.5V
Typical Gate Charge @ 10V (nC)
25
Typical Input Capacitance @ Vds (pF)
1000@10V
Maximum Power Dissipation (mW)
2300
Typical Fall Time (ns)
12
Typical Rise Time (ns)
20
Typical Turn-Off Delay Time (ns)
30
Typical Turn-On Delay Time (ns)
25
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Automotive
No
Pin Count
8
Supplier Package
SMD
Standard Package Name
SMD
Military
No
Mounting
Surface Mount
Package Height
1.1(Max)
Package Length
3.05
Package Width
1.65
PCB changed
8
Lead Shape
Flat

Дополнительная информация

Datasheet SI5457DC-T1-GE3

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